An Investigation into the Impact of Surface Passivation Techniques Using Metal-Semiconductor Interfaces

An Investigation into the Impact of Surface Passivation Techniques Using Metal-Semiconductor Interfaces

Author(s):

Publication title:

Silicon Carbide and Related Materials 2016

Title of ser.:

Materials science forum

Ser. no.:

897

Pub. Year:

2017

Page(from):

443

Page(to):

446

Pages:

4

Pub. info.:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9783035710434 [3035710430]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00066569
Series ID:	PA00000012
Conf. info. (Name):	ECSCRM
Conf. info. (Number):	2016
Conf. info. (Venue):	Halkidiki, Greece
Conf. info. (Date):	2016.09.25-2016.09.29
Note for article:	ECSCRM 2016, 25-29 September, 2016, Halkidiki, Greece

Similar Items:

1 Conference Proceedings Combined N₂O and Phosphorus Passivations for the 4H-SiC/SiO₂ Interface with Oxide Grown at 1400°C H. Rong, Y.K. Sharma, P.A. Mawby Trans Tech Publications	7 Conference Proceedings Numerical Study of Energy Capability of Si/SiC LDMOSFETs C.W. Chan, F. Li, P.A. Mawby, P.M. Gammon Trans Tech Publications
2 Conference Proceedings Si/SiC Substrates for the Implementation of Linear-Doped Power LDMOS Studied with Device Simulation C.W. Chan, Y. Bonyadi, P.A. Mawby, P.M. Gammon Trans Tech Publications	8 Conference Proceedings Characterization of 4H-SiC PiN Diodes Formed on Defects Identified by PL Imaging Y. Bonyadi, P.M. Gammon, R. Bonyadi, V.A. Shah, C.A. Fisher Trans Tech Publications
3 Conference Proceedings The Impact of Oxygen Flow Rate on the Oxide Thickness and Interface Trap Density in 4H-SiC MOS Capacitors S.M. Thomas, M.R. Jennings, Y.K. Sharma, C.A. Fisher, P.A. Mawby Trans Tech Publications	9 Conference Proceedings The Effect of Interfacial Charge on the Development of Wafer Bonded Silicon-on-Silicon-Carbide Power Devices P.M. Gammon, F. Li, C.W. Chan, A.M. Sanchez, S.A. Hindmarsh, F. Gity, T. Trajkovic, V. Kilchytska, V. Pathirana, G. … Trans Tech Publications
4 Conference Proceedings Impact of the Oxidation Temperature on the Interface Trap Density in 4H-SiC MOS Capacitors S.M. Thomas, M.R. Jennings, Y.K. Sharma, C.A. Fisher, P.A. Mawby Trans Tech Publications	10 Conference Proceedings Functional Oxide as an Extreme High-k Dielectric towards 4H-SiC MOSFET Incorporation S.A.O. Russell, M.R. Jennings, T.X. Dai, F. Li, D.P. Hamilton, C.A. Fisher, Y.K. Sharma, P.A. Mawby, A. Pérez-Tomás Trans Tech Publications
5 Conference Proceedings Physical Characterisation of 3C-SiC(001)/SiO₂ Interface Using XPS F. Li, O. Vavasour, M. Walker, D.M. Martin, Y.K. Sharma, S.A.O. Russell, M.R. Jennings, A. Pérez-Tomás, P.A. Mawby Trans Tech Publications	11 Conference Proceedings Cryogenic Characterisation and Modelling of Commercial SiC MOSFETs L.J. Woodend, P.M. Gammon, V.A. Shah, A. Pérez-Tomás, F. Li, D.P. Hamilton, M. Myronov, P.A. Mawby Trans Tech Publications
6 Conference Proceedings 4H-SiC Diode Avalanche Breakdown Voltage Estimation by Simulation and Junction Termination Extension Analysis H. Rong, Y.K. Sharma, F. Li, M.R. Jennings, P.A. Mawby Trans Tech Publications	12 Conference Proceedings Comparison of Different Surface Pre-Treatments to n-Type 4H-SiC and their Effect on the Specific Contact Resistance of Ni Ohmic Contacts Pope, G., Guy, O., Mawby, P.A. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12