6.5 kV 4H-SiC PiN Diodes without Bipolar Degradation

6.5 kV 4H-SiC PiN Diodes without Bipolar Degradation

Author(s):

Publication title:

Silicon Carbide and Related Materials 2016

Title of ser.:

Materials science forum

Ser. no.:

897

Pub. Year:

2017

Page(from):

435

Page(to):

438

Pages:

4

Pub. info.:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9783035710434 [3035710430]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00066569
Series ID:	PA00000012
Conf. info. (Name):	ECSCRM
Conf. info. (Number):	2016
Conf. info. (Venue):	Halkidiki, Greece
Conf. info. (Date):	2016.09.25-2016.09.29
Note for article:	ECSCRM 2016, 25-29 September, 2016, Halkidiki, Greece

Similar Items:

1 Conference Proceedings 6.5 kV n-Channel 4H-SiC IGBT with Low Switching Loss Achieved by Extremely Thin Drift Layer N. Watanabe, H. Yoshimoto, A. Shima, R. Yamada, Y. Shimamoto Trans Tech Publications	7 Conference Proceedings 6.5 kV SiC PiN Diodes with Improved Forward Characteristics D. Peters, W. Bartsch, B. Thomas, R. Sommer Trans Tech Publications
2 Conference Proceedings Modeling of Stacking Fault Expansion Velocity of Body Diode in 4H-SiC MOSFET K. Konishi, R. Fujita, A. Shima, Y. Shimamoto Trans Tech Publications	8 Conference Proceedings Characterization of Packaged 6.5 kV SiC PiN-Diodes up to 300°C K.O. Dohnke, D. Peters, R. Schörner Trans Tech Publications
3 Conference Proceedings Influence of Trench Structure on Reverse Characteristics of 4H-SiC JBS Diodes K. Konishi, N. Kameshiro, N. Yokoyama, A. Shima, Y. Shimamoto Trans Tech Publications	9 Conference Proceedings Thick Epitaxial Layers on 4o Off-Oriented 4H-SiC Suited for PiN-Diodes with Blocking Voltages above 6.5 kV Hecht, C., Thomas, B., Bartsch, W. Trans Tech Publications
4 Conference Proceedings 3.3 kV 4H-SiC DMOSFET with Highly Reliable Gate Insulator and Body Diode A. Shima, H. Shimizu, Y. Mori, M. Sagawa, K. Konishi, R. Fujita, T. Ishigaki, N. Tega, K. Kobayashi, S. Sato, Y. … Trans Tech Publications	10 Conference Proceedings 5.5-kV Bipolar Diodes From High-Quality CVD 4H-SiC Irvine, K. G., Singh, R., Paisley, M. J., Palmour, J. W., Kordina, O., Carter, C. H., Jr. MRS - Materials Research Society
5 Conference Proceedings Bipolar Degradation of 6.5 kV SiC pn-Diodes: Result Prediction by Photoluminescence L. Wehrhahn-Kilian, K.O. Dohnke, D. Kaminzky, B. Kallinger, S. Oppel Trans Tech Publications	11 Conference Proceedings 8.3 kV 4H-SiC PiN Diode on (0001) C-Face with Small Forward Voltage Degradation Nakayama, K., Sugawara, Y., Tsuchida, H., Miyanagi, T., Kamata, I., Nakamura, T., Asano, K., Ishii, R. Trans Tech Publications
6 Conference Proceedings SXRT Investigations on Electrically Stressed 4H-SiC PiN Diodes for 6.5 kV B. Kallinger, P. Berwian, J. Friedrich, C. Hecht, D. Peters Trans Tech Publications	12 Conference Proceedings Structural Defects in Electrically Degraded 4H-SiC PiN Diodes Persson, P.O.A., Jacobson, H., Molina-Aldareguia, J.M., Bergman, J.P., Tuomi, T., Clegg, W.J., Janzen, E., Hultman, L. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12