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Simulation of 4H-SiC Trench Junction Barrier Schottky Diodes with High-k Dielectrics

Author(s):
S. Yang
Q.W. Song
X.Y. Tang
Y.M. Zhang
H. Yuan
Q.J. Sun
1 more
Publication title:
Silicon Carbide and Related Materials 2016
Title of ser.:
Materials science forum
Ser. no.:
897
Pub. Year:
2017
Page(from):
431
Page(to):
434
Pages:
4
Pub. info.:
Aedermannsdorf, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9783035710434 [3035710430]
Language:
English
Call no.:
M23650
Type:
Conference Proceedings

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