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Growth and Temperature-Depending Raman Characterization of Different Nitrogen-Doped 4H-SiC Crystals

Author(s):
X.L. Yang
X.F. Chen
Y. Peng
X.J. Xie
X.B. Hu
X.G. Xu
P. Yu
R.P. Wang
3 more
Publication title:
Silicon Carbide and Related Materials 2016
Title of ser.:
Materials science forum
Ser. no.:
897
Pub. Year:
2017
Page(from):
307
Page(to):
310
Pages:
4
Pub. info.:
Aedermannsdorf, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9783035710434 [3035710430]
Language:
English
Call no.:
M23650
Type:
Conference Proceedings

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