Depth-Resolved Carrier Lifetime Measurements in 4H-SiC Epilayers Monitoring Carbon Vacancy Elimination
- Author(s):
- Publication title:
- Silicon Carbide and Related Materials 2016
- Title of ser.:
- Materials science forum
- Ser. no.:
- 897
- Pub. Year:
- 2017
- Page(from):
- 258
- Page(to):
- 261
- Pages:
- 4
- Pub. info.:
- Aedermannsdorf, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9783035710434 [3035710430]
- Language:
- English
- Call no.:
- M23650
- Type:
- Conference Proceedings
Similar Items:
Trans Tech Publications |
7
Conference Proceedings
High-Resolution Time-Resolved Carrier Lifetime and Photoluminescence Mapping of 4H-SiC Epilayers
Trans Tech Publications |
2
Conference Proceedings
Controlling the Carbon Vacancy Concentration in 4H-SiC Subjected to High Temperature Treatment
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
4
Conference Proceedings
DLTS Study on Al+ Ion Implanted and 1950°C Annealed p-i-n 4H-SiC Vertical Diodes
Trans Tech Publications |
Trans Tech Publications |
5
Conference Proceedings
Formation of D-Center in p-Type 4H-SiC Epi-Layers during High Temperature Treatments
Trans Tech Publications |
Trans Tech Publications |
6
Conference Proceedings
Depth- and Time-Resolved Free Carrier Absorption in 4H SiC Epilayers:A Study of Carrier Recombination and Transport Parameters
Trans Tech Publications |
Electrochemical Society |