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Exploration of Bulk and Epitaxy Defects in 4H-SiC Using Large Scale Optical Characterization

Author(s):
R.T. Leonard
M.J. Paisley
S. Bubel
J.J. Sumakeris
A.R. Powell
Y. Khlebnikov
J.C. Seaman
J. Ambati
A.A. Burk
M.J. O'Loughlin
E. Balkas
6 more
Publication title:
Silicon Carbide and Related Materials 2016
Title of ser.:
Materials science forum
Ser. no.:
897
Pub. Year:
2017
Page(from):
226
Page(to):
232
Pages:
7
Pub. info.:
Aedermannsdorf, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9783035710434 [3035710430]
Language:
English
Call no.:
M23650
Type:
Conference Proceedings

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