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V and Ti Doping in 4H-SiC Epitaxy for Reduction of Carrier Lifetimes

Author(s):
Publication title:
Silicon Carbide and Related Materials 2016
Title of ser.:
Materials science forum
Ser. no.:
897
Pub. date:
2017
Page(from):
67
Page(to):
70
Pages:
4
Pub. info.:
Aedermannsdorf, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9783035710434 [3035710430]
Language:
English
Call no.:
M23650
Type:
Conference Proceedings

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