Formation of Basal Plane Dislocations Introduced by Collision of Macrosteps on Growth Surface during SiC Solution Growth

Formation of Basal Plane Dislocations Introduced by Collision of Macrosteps on Growth Surface during SiC Solution Growth

Author(s):

T. Hori

Publication title:

Silicon Carbide and Related Materials 2016

Title of ser.:

Materials science forum

Ser. no.:

897

Pub. Year:

2017

Page(from):

28

Page(to):

31

Pages:

4

Pub. info.:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9783035710434 [3035710430]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00066569
Series ID:	PA00000012
Conf. info. (Name):	ECSCRM
Conf. info. (Number):	2016
Conf. info. (Venue):	Halkidiki, Greece
Conf. info. (Date):	2016.09.25-2016.09.29
Note for article:	ECSCRM 2016, 25-29 September, 2016, Halkidiki, Greece

Similar Items:

1 Conference Proceedings SiC Solution Growth on Si Face with Extremely Low Density of Threading Screw Dislocations for Suppression of Polytype Transformation K. Murayama, T. Hori, S. Harada, S. Xiao, M. Tagawa, T. Ujihara Trans Tech Publications	7 Conference Proceedings Bulk 3C-SiC Crystal by Top Seeded Solution Growth Method K. Seki, S. Harada, T. Ujihara Trans Tech Publications
2 Conference Proceedings Surface Morphology and Threading Dislocation Conversion Behavior during Solution Growth of 4H-SiC Using Al-Si Solvent S. Harada, Y. Yamamoto, S.Y. Xiao, M. Tagawa, T. Ujihara Trans Tech Publications	8 Conference Proceedings 3C-SiC Crystal on Sapphire by Solution Growth Method K. Shibata, S. Harada, T. Ujihara Trans Tech Publications
3 Conference Proceedings Solvent Design for High-Purity SiC Solution Growth S. Harada, G. Hatasa, K. Murayama, T. Kato, M. Tagawa, T. Ujihara Trans Tech Publications	9 Conference Proceedings Dislocation Conversion During SiC Solution Growth for High-Quality Crystals S. Harada, Y. Yamamoto, S.Y. Xiao, D. Koike, T. Mutoh Trans Tech Publications
4 Conference Proceedings Reduction of Threading Screw Dislocation Utilizing Defect Conversion during Solution Growth of 4H-SiC S. Harada, Y. Yamamoto, K. Seki, T. Ujihara Trans Tech Publications	10 Conference Proceedings Increase in the Growth Rate by Rotating the Seed Crystal at High Speed during the Solution Growth of SiC T. Umezaki, D. Koike, A. Horio, S. Harada, T. Ujihara Trans Tech Publications
5 Conference Proceedings Conversion Mechanism of Threading Screw Dislocation during SiC Solution Growth T. Ujihara, S. Kozawa, K. Seki, Y. Yamamoto, S. Harada Trans Tech Publications	11 Conference Proceedings Improvement of Surface Morphology by Solution Flow Control in Solution Growth of SiC on Off-Axis Seeds T. Umezaki, D. Koike, S. Harada, T. Ujihara Trans Tech Publications
6 Conference Proceedings Stable Growth of 4H-SiC Single Polytype by Controlling the Surface Morphology Using a Temperature Gradient in Solution Growth Y. Yamamoto, K. Seki, S. Kozawa, S. Harada, T. Ujihara Trans Tech Publications	12 Conference Proceedings Research on Solvent Composition for Different Surface Morphology on C Face during 4HSiC Solution Growth S.Y. Xiao, N. Hara, S. Harada, K. Murayama, K. Aoyagi Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12