The application criterion of model-based optical proximity correction in a low k1 process

The application criterion of model-based optical proximity correction in a low k1 process

Author(s):

Doo-Youl Lee

Publication title:

Optical microlithography XVIII : 1-4 March, 2005, San Jose, California, USA

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

5754

Pub. Year:

2005

Pt.:

2

Page(from):

821

Page(to):

828

Pages:

8

Pub. info.:

Bellingham, Wash.: SPIE - The International Society of Optical Engineering

ISSN:

0277786X

ISBN:

9780819457349 [0819457345]

Language:

English

Call no.:

P63600/5754

Type:

Conference Proceedings

Details

TDL ID:	ZA00014979
Series ID:	PA00000029
Conf. info. (Name):	SPIE Advanced Lithography : Advances in resist technology and processing
Conf. info. (Number):	2005 : 18th
Conf. info. (Venue):	San Jose, CA, USA
Conf. info. (Date):	2005.03.01-2005.03.04
Note for article:	18th Optical microlithography,1-4 March, 2005, San Jose, California, USA

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