Bilayer resists based on polyhedral oligomeric silsesquioxane for 193-nm lithography

Bilayer resists based on polyhedral oligomeric silsesquioxane for 193-nm lithography

Author(s):

Ramakrishnan Ganesan

Publication title:

Advances in resist technology and processing XXII : 28 February-2 March, 2005, San Jose, California, USA

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

5753(2)

Pub. Year:

2005

Pt.:

2

Page(from):

671

Page(to):

678

Pages:

8

Pub. info.:

Bellingham, Wash.: SPIE - The International Society of Optical Engineering

ISSN:

0277786X

ISBN:

9780819457332 [0819457337]

Language:

English

Call no.:

P63600/5753-2

Type:

Conference Proceedings

Details

TDL ID:	ZA00014978
Series ID:	PA00000029
Conf. info. (Name):	SPIE Advanced Lithography : Advances in resist technology and processing
Conf. info. (Number):	2005 : 22th
Conf. info. (Venue):	San Jose, CA, USA
Conf. info. (Date):	2005.02.28-2005.03.02
Note for article:	22th Symposium on Advances in resist technology and processing, 28 February-2 March, 2005, San Jose, California, USA

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