New positive-tone deep-UV photoresist based on poly(4-hydroxystyrene) and an acid labile protecting group

New positive-tone deep-UV photoresist based on poly(4-hydroxystyrene) and an acid labile protecting group

Author(s):

Publication title:

Advances in resist technology and processing XII : 20-22 February 1995, Santa Clara, California

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

2438

Pub. Year:

1995

Pt.:

1

Page(from):

125

Page(to):

142

Pages:

18

Pub. info.:

Bellingham, WA: Society of Photo-optical Instrumentation Engineers

ISSN:

0277786X

ISBN:

9780819417862 [0819417866]

Language:

English

Call no.:

P63600/2438

Type:

Conference Proceedings

Details

TDL ID:	ZA00057641
Series ID:	PA00000029
Conf. info. (Name):	Symposium on advances in resist technology and processing
Conf. info. (Number):	12th
Conf. info. (Venue):	Santa Clara, CA, USA
Conf. info. (Date):	1995.02.20-1995.02.22
Note for article:	12th Symposium on advances in resist technology and processing, February 20-22, 1995, Santa Clara, CA, USA. 2438-90

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