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Luminescent properties of nitrogen doped gap semiconductor studied with photothermal deflection spectroscopy

Author(s):
Publication title:
Growth and characterization of materials for infrared detectors II : 13-14 July, 1995, San Diego, California
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
2554
Pub. Year:
1995
Page(from):
205
Page(to):
212
Pages:
8
Pub. info.:
Bellingham, WA: Society of Photo-optical Instrumentation Engineers
ISSN:
0277786X
ISBN:
9780819419132 [0819419133]
Language:
English
Call no.:
P63600/2554
Type:
Conference Proceedings

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