Negative differential gain in strained-layer InGaAs quantum well laser diodes

Negative differential gain in strained-layer InGaAs quantum well laser diodes

Author(s):

Publication title:

Physics and simulation of optoelectronic devices III : 6-9 February 1995, San Jose, California

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

2399

Pub. Year:

1995

Page(from):

302

Page(to):

306

Pages:

5

Pub. info.:

Bellingham, WA: Society of Photo-optical Instrumentation Engineers

ISSN:

0277786X

ISBN:

9780819417466 [0819417467]

Language:

English

Call no.:

P63600/2399

Type:

Conference Proceedings

Details

TDL ID:	ZA00057602
Series ID:	PA00000029
Conf. info. (Name):	Symposium on physics and simulation of optoelectronic devices
Conf. info. (Number):	3rd
Conf. info. (Venue):	San Jose, CA, USA
Conf. info. (Date):	1995.02.06-1995.02.09
Note for article:	3rd Symposium on physics and simulation of optoelectronic devices, February 6-9, 1995, San Jose, CA, USA. 2399-37

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