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Monolithic integration of 1.3-µm InGaAs photodetectors and high-electron-mobility transistor (HEMT) electronic circuits on GaAs

Author(s):
Publication title:
Optoelectronic integrated circuit materials, physics, and devices : 6-9 February 1995, San Jose, California
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
2397
Pub. Year:
1995
Page(from):
31
Page(to):
41
Pages:
11
Pub. info.:
Bellingham, WA: Society of Photo-optical Instrumentation Engineers
ISSN:
0277786X
ISBN:
9780819417442 [0819417440]
Language:
English
Call no.:
P63600/2397
Type:
Conference Proceedings

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