Interfacial reaction of bilayer Co/Ti with Si<sub>1-x</sub>Ge<sub>x</sub> epitaxially grown on Si(100)

Interfacial reaction of bilayer Co/Ti with Si_1-xGe_x epitaxially grown on Si(100)

Author(s):

Publication title:

Second International Conference on Thin Film Physics and Applications : '94 TFPA : 15-17 April 1994, Shanghai, China

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

2364

Pub. Year:

1994

Page(from):

474

Page(to):

477

Pages:

4

Pub. info.:

Bellingham, WA: Society of Photo-optical Instrumentation Engineers

ISSN:

0277786X

ISBN:

9780819417084 [0819417084]

Language:

English

Call no.:

P63600/2364

Type:

Conference Proceedings

Details

TDL ID:	ZA00057567
Series ID:	PA00000029
Conf. info. (Name):	International Conference on Thin Film Physics and Applications : TFPA
Conf. info. (Number):	2nd
Conf. info. (Venue):	Shanghai, China
Conf. info. (Date):	1994.04.15-1994.04.17
Note for article:	2nd International Conference on Thin Film Physics and Applications : TFPA, April 15-17, 1994, Shanghai, China. 2364-81

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Interfacial reaction of bilayer Co/Ti with Si1-xGex epitaxially grown on Si(100)

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Interfacial reaction of bilayer Co/Ti with Si_1-xGe_x epitaxially grown on Si(100)