(608e) Effects of Point Defects On the Oxygen Precipitates of Si Wafer Grown by Czochralski Method

(608e) Effects of Point Defects On the Oxygen Precipitates of Si Wafer Grown by Czochralski Method

Author(s):

Publication title:

2011 AIChE annual meeting, October 16-21, Minneapolis Convention Center, Minneapolis, MN : conference proceedings : Non-topical conferences

Title of ser.:

AIChE Conference Proceedings

Ser. no.:

P-267

Pub. Year:

2011

Pt.:

Catalysis & Reaction Engineering Division

Pages:

11

Pub. info.:

New York: American Institute of Chemical Engineers

ISBN:

9780816910700 [0816910707]

Language:

English

Call no.:

A08000/2011 [CD-ROM]

Type:

Conference Proceedings

Details

TDL ID:	ZA00061222
Series ID:	PA00000008
Conf. info. (Name):	AIChE annual meeting ; Particle Technology Forum ; North American Mixing Forum ; Computational Molecular Science and Engineering Forum ; Nanoscale Science and Engineering Forum ; Sustainable Engineering Forum ; Chemical Engineering & the Law Forum
Conf. info. (Number):	2011
Conf. info. (Venue):	Minneapolis, MN, USA
Conf. info. (Date):	2011.10.16-2011.10.21
Note for article:	2011 AIChE annual meeting, Minneapolis Convention Center, Minneapolis, MN, October 16-21, 2011. Catalysis and Reaction Engineering Division (Paper233171)

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