Study and Optimization of a 600V Pseudo-Vertical GaN-on-Silicon Rectifier by Finite Element Simulations

Study and Optimization of a 600V Pseudo-Vertical GaN-on-Silicon Rectifier by Finite Element Simulations

Author(s):

Publication title:

Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy

Title of ser.:

Materials science forum

Ser. no.:

858

Pub. Year:

2016

Page(from):

1190

Page(to):

1193

Pages:

4

Pub. info.:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9783035710427 [3035710422]

Language:

English

Call no.:

M23650 [v.858]

Type:

Conference Proceedings

Details

TDL ID:	ZA00055306
Series ID:	PA00000012
Conf. info. (Name):	International Conference on Silicon Carbide and Related Materials - ICSCRM 2015
Conf. info. (Number):	16th
Conf. info. (Venue):	Giardini Naxos, Italy
Conf. info. (Date):	2015.10.04-2015.10.09
Note for article:	16th International Conference on Silicon Carbide and Related Materials : ICSCRM 2015, October 4-9, 2015, Giardini Naxos, Italy

Similar Items:

1 Conference Proceedings Investigations on the Origin of the Ohmic Behavior for Ti/Al Based Contacts on n-Type GaN N. Thierry Jebali, O. Ménard, C. Dubois, D. Tournier, E. Collard Trans Tech Publications	7 Conference Proceedings Evidence of Low Temperature Decomposition of GaN Hetero-Epitaxial Layers on C-Plane Sapphire Surface Characterized by Differential Scanning Calorimetry N. Thierry-Jebali, R. Chiriac, C. Brylinski Trans Tech Publications
2 Conference Proceedings Al-Si-Ti Ohmic Contacts on N-Type Gallium Nitride N. Thierry-Jebali, O. Ménard, A. Yvon, E. Collard, M. Zhe Trans Tech Publications	8 Conference Proceedings Study of the Nucleation of p-Doped SiC in Selective Epitaxial Growth Using VLS Transport D. Carole, A. Vo Ha, A. Thomas, M. Lazar, N. Thierry-Jebali Trans Tech Publications
3 Conference Proceedings 600 V PIN Diodes Fabricated Using On-Axis 4H Silicon Carbide G. Civrac, F. Laariedh, N. Thierry Jebali, M. Lazar, D. Planson Trans Tech Publications	9 Conference Proceedings Comparison of 2.5D and 3D Simulation Methods for Limiting Electrode Debiasing of 4HSiC Interdigitated Devices N. Thierry-Jebali, T. Kempf, F. Mandorlo Trans Tech Publications
4 Conference Proceedings Active Devices for Power Electronics: SiC vs III-N Compounds - The Case of Schottky Rectifiers C. Brylinski, O. Ménard, N. Thierry-Jebali, F. Cayrel, D. Alquier Trans Tech Publications	10 Conference Proceedings Computer simulation of the slip dissolution model using finite element analysis Magnin,Thierry Trans Tech Publications
5 Conference Proceedings SiC Power Devices Operation from Cryogenic to High Temperature: Investigation of Various 1.2kV SiC Power Devices T. Chailloux, C. Calvez, N. Thierry-Jebali, D. Planson, D. Tournier Trans Tech Publications	11 Conference Proceedings Electrical Characterization of PiN Diodes with p⁺ Layer Selectively Grown by VLS Transport N. Thierry-Jebali, M. Lazar, A. Vo Ha, D. Carole, V. Soulière Trans Tech Publications
6 Conference Proceedings Design Optimization of a High Temperature 1.2 kV 4H-SiC Buried Grid JBS Rectifier H. Elahipanah, N. Thierry-Jebali, S.A. Reshanov, W. Kaplan, A. Zhang, J.K. Lim, M. Bakowski, M. Östling, A. Schöner Trans Tech Publications	12 Conference Proceedings Applications of Vapor-Liquid-Solid Selective Epitaxy of Highly p-Type Doped 4H-SiC: PiN Diodes with Peripheral Protection and Improvement of Specific Contact … N. Thierry-Jebali, M. Lazar, A. Vo-Ha, D. Carole, V. Soulière Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12