Highly Sensitive NO2 Graphene Sensor Made on SiC Grown in Ta Crucible
- Author(s):
- Publication title:
- Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy
- Title of ser.:
- Materials science forum
- Ser. no.:
- 858
- Pub. Year:
- 2016
- Page(from):
- 1149
- Page(to):
- 1152
- Pages:
- 4
- Pub. info.:
- Aedermannsdorf, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9783035710427 [3035710422]
- Language:
- English
- Call no.:
- M23650 [v.858]
- Type:
- Conference Proceedings
Similar Items:
1
Conference Proceedings
Sublimation Growth of 4 and 6 Inch 4H-SiC Low Defect Bulk Crystals in Ta (TaC) Crucibles
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Materials Research Society |
Trans Tech Publications |
9
Conference Proceedings
The Effect of Modified Crucible Design and Seed Attachment on SiC Crystal Grown by PVT
Trans Tech Publications |
4
Conference Proceedings
Heat-Resistant Barrier Contacts Made on the Basis of TiBx and ZrBx to SiC and GaN
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
6
Conference Proceedings
Low-Temperature Transport Properties of Graphene and Multilayer Graphene on 6H-SiC
Trans Tech Publications |
12
Conference Proceedings
Development of FETs and Resistive Devices Based on Epitaxially Grown Single Layer Graphene on SiC for Highly Sensitive Gas Detection
Trans Tech Publications |