Si/SiC Substrates for the Implementation of Linear-Doped Power LDMOS Studied with Device Simulation

Si/SiC Substrates for the Implementation of Linear-Doped Power LDMOS Studied with Device Simulation

Author(s):

Publication title:

Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy

Title of ser.:

Materials science forum

Ser. no.:

858

Pub. Year:

2016

Page(from):

844

Page(to):

847

Pages:

4

Pub. info.:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9783035710427 [3035710422]

Language:

English

Call no.:

M23650 [v.858]

Type:

Conference Proceedings

Details

TDL ID:	ZA00055306
Series ID:	PA00000012
Conf. info. (Name):	International Conference on Silicon Carbide and Related Materials - ICSCRM 2015
Conf. info. (Number):	16th
Conf. info. (Venue):	Giardini Naxos, Italy
Conf. info. (Date):	2015.10.04-2015.10.09
Note for article:	16th International Conference on Silicon Carbide and Related Materials : ICSCRM 2015, October 4-9, 2015, Giardini Naxos, Italy

Similar Items:

1 Conference Proceedings Numerical Study of Energy Capability of Si/SiC LDMOSFETs C.W. Chan, F. Li, P.A. Mawby, P.M. Gammon Trans Tech Publications	7 Conference Proceedings Cryogenic Characterisation and Modelling of Commercial SiC MOSFETs L.J. Woodend, P.M. Gammon, V.A. Shah, A. Pérez-Tomás, F. Li, D.P. Hamilton, M. Myronov, P.A. Mawby Trans Tech Publications
2 Conference Proceedings Simulations of a Lateral PiN Diode on Si/SiC Substrate for High Temperature Applications C.W. Chan, P.M. Gammon, V.A. Shah, H. Chen, M.R. Jennings Trans Tech Publications	8 Conference Proceedings Silicon-on-SiC, a Novel Semiconductor Structure for Power Devices M.R. Jennings, A. Pérez-Tomás, O.J. Guy, M. Lodzinski, P.M. Gammon Trans Tech Publications
3 Conference Proceedings The Effect of Interfacial Charge on the Development of Wafer Bonded Silicon-on-Silicon-Carbide Power Devices P.M. Gammon, F. Li, C.W. Chan, A.M. Sanchez, S.A. Hindmarsh, F. Gity, T. Trajkovic, V. Kilchytska, V. Pathirana, G. … Trans Tech Publications	9 Conference Proceedings SiC MOSFET Channel Mobility Dependence on Substrate Doping and Temperature Considering High Density of Interface Traps A. Perez-Tomas, M.R. Jennings, P.A. Mawby, J.A. Covington, P. Godignon, J. Millan, N. Mestres Trans Tech Publications
4 Conference Proceedings An Investigation into the Impact of Surface Passivation Techniques Using Metal-Semiconductor Interfaces Y. Bonyadi, P.M. Gammon, Y.K. Sharma, G. Baker, P.A. Mawby Trans Tech Publications	10 Conference Proceedings Simulation of GaInP laser diode structures Blood,P., Foulger,D.L., Smowton,P.M., Mawby,P.A. SPIE-The International Society for Optical Engineering
5 Conference Proceedings Characterization of 4H-SiC PiN Diodes Formed on Defects Identified by PL Imaging Y. Bonyadi, P.M. Gammon, R. Bonyadi, V.A. Shah, C.A. Fisher Trans Tech Publications	11 Conference Proceedings The Cryogenic Testing and Characterisation of SiC Diodes P.M. Gammon, C.A. Fisher, V.A. Shah, M.R. Jennings, A. Pérez-Tomás Trans Tech Publications
6 Conference Proceedings Cryogenic Characterization of Commercial SiC Power MOSFETs H. Chen, P.M. Gammon, V.A. Shah, C.A. Fisher, C. Chan Trans Tech Publications	12 Conference Proceedings Physical Modelling of 4H-SiC PiN Diodes C.A. Fisher, M.R. Jennings, A.T. Bryant, A. Pérez-Tomás, P.M. Gammon Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12