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Conduction Mechanisms at SiO2/4H-SiC Interfaces in MOS-Based Devices Subjected to Post Deposition Annealing in N2O

Author(s):
Publication title:
Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy
Title of ser.:
Materials science forum
Ser. no.:
858
Pub. Year:
2016
Page(from):
705
Page(to):
710
Pages:
6
Pub. info.:
Aedermannsdorf, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9783035710427 [3035710422]
Language:
English
Call no.:
M23650 [v.858]
Type:
Conference Proceedings

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