Impact of Al Doping Concentration at Channel Region on Mobility and Threshold Voltage Instability in 4H-SiC Trench N-MOSFETs

Impact of Al Doping Concentration at Channel Region on Mobility and Threshold Voltage Instability in 4H-SiC Trench N-MOSFETs

Author(s):

Publication title:

Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy

Title of ser.:

Materials science forum

Ser. no.:

858

Pub. Year:

2016

Page(from):

607

Page(to):

610

Pages:

4

Pub. info.:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9783035710427 [3035710422]

Language:

English

Call no.:

M23650 [v.858]

Type:

Conference Proceedings

Details

TDL ID:	ZA00055306
Series ID:	PA00000012
Conf. info. (Name):	International Conference on Silicon Carbide and Related Materials - ICSCRM 2015
Conf. info. (Number):	16th
Conf. info. (Venue):	Giardini Naxos, Italy
Conf. info. (Date):	2015.10.04-2015.10.09
Note for article:	16th International Conference on Silicon Carbide and Related Materials : ICSCRM 2015, October 4-9, 2015, Giardini Naxos, Italy

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