Growth of Low Resistivity p-Type 4H-SiC Crystals by Sublimation with Using Aluminum and Nitrogen Co-Doping
- Author(s):
- Publication title:
- Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy
- Title of ser.:
- Materials science forum
- Ser. no.:
- 858
- Pub. Year:
- 2016
- Page(from):
- 77
- Page(to):
- 80
- Pages:
- 4
- Pub. info.:
- Aedermannsdorf, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9783035710427 [3035710422]
- Language:
- English
- Call no.:
- M23650 [v.858]
- Type:
- Conference Proceedings
Similar Items:
Trans Tech Publications |
Trans Tech Publications |
2
Conference Proceedings
Growth of Low Resistivity n-Type 4H-SiC Bulk Crystals by Sublimation Method Using Co-Doping Technique
Trans Tech Publications |
Trans Tech Publications |
3
Conference Proceedings
Growth Study of p-Type 4H-SiC with Using Aluminum and Nitrogen Co-Doping by 2-Zone Heating Sublimation Method
Trans Tech Publications |
9
Conference Proceedings
Nitrogen Incorporation during Seeded Sublimation Growth of 4H-SiC and 6H-SiC
Trans Tech Publications |
Trans Tech Publications |
10
Conference Proceedings
Sublimation Growth of SiC Crystal Using Modified Crucible Design on 4H-SiC {03-38} Substrate and Defect Analysis
Trans Tech Publications |
5
Conference Proceedings
Defect and Growth Analysis of SiC Bulk Single Crystals with High Nitrogen Doping
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |