Doping Fluctuation and Defect Formation in Fast 4H-SiC Crystal Growth Using a High-Temperature Gas Source Method

Doping Fluctuation and Defect Formation in Fast 4H-SiC Crystal Growth Using a High-Temperature Gas Source Method

Author(s):

Publication title:

Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy

Title of ser.:

Materials science forum

Ser. no.:

858

Pub. Year:

2016

Page(from):

61

Page(to):

64

Pages:

4

Pub. info.:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9783035710427 [3035710422]

Language:

English

Call no.:

M23650 [v.858]

Type:

Conference Proceedings

Details

TDL ID:	ZA00055306
Series ID:	PA00000012
Conf. info. (Name):	International Conference on Silicon Carbide and Related Materials - ICSCRM 2015
Conf. info. (Number):	16th
Conf. info. (Venue):	Giardini Naxos, Italy
Conf. info. (Date):	2015.10.04-2015.10.09
Note for article:	16th International Conference on Silicon Carbide and Related Materials : ICSCRM 2015, October 4-9, 2015, Giardini Naxos, Italy

Similar Items:

1 Conference Proceedings Limitations in Very Fast Growth of 4H-SiC Crystals by High-Temperature Gas Source Method N. Hoshino, I. Kamata, Y. Tokuda, E. Makino, N. Sugiyama Trans Tech Publications	7 Conference Proceedings 4H-SiC Bulk Growth Using High-Temperature Gas Source Method Y. Tokuda, J. Kojima, K. Hara, H. Tsuchida, S. Onda Trans Tech Publications
2 Conference Proceedings Fast 4H-SiC Crystal Growth by High-Temperature Gas Source Method N. Hoshino, I. Kamata, Y. Tokuda, E. Makino, J. Kojima Trans Tech Publications	8 Conference Proceedings Fast Epitaxial Growth of 4H-SiC and Analysis of Defect Transfer H. Tsuchida, M. Ito, I. Kamata, M. Nagano Trans Tech Publications
3 Conference Proceedings Dislocation Analysis of 4H-SiC Crystals Obtained at Fast Growth Rate by the High-Temperature Gas Source Method I. Kamata, N. Hoshino, Y. Tokuda, E. Makino, J. Kojima Trans Tech Publications	9 Conference Proceedings Advances in Fast Epitaxial Growth of 4H-SiC and Defect Reduction H. Tsuchida, I. Kamata, M. Ito, T. Miyazawa, H. Uehigashi Trans Tech Publications
4 Conference Proceedings High-Speed and Long-Length SiC Growth Using High-Temperature Gas Source Method J. Kojima, E. Makino, Y. Tokuda, N. Sugiyama, N. Hoshino Trans Tech Publications	10 Conference Proceedings Investigation of Defect Formation in 4H-SiC(0001) and (000-1) Epitaxy H. Tsuchida, I. Kamata, M. Nagano Trans Tech Publications
5 Conference Proceedings Developing Technologies of SiC Gas Source Growth Method J. Kojima, Y. Tokuda, E. Makino, N. Sugiyama, N. Hoshino Trans Tech Publications	11 Conference Proceedings Fast 4H-SiC Epitaxial Growth on 150 mm Diameter Area with High-Speed Wafer Rotation H. Fujibayashi, M. Ito, H. Ito, I. Kamata, M. Naito Trans Tech Publications
6 Conference Proceedings Evolution of Fast 4H-SiC CVD Growth and Defect Reduction Techniques H. Tsuchida, I. Kamata, M. Ito, T. Miyazawa, N. Hoshino Trans Tech Publications	12 Conference Proceedings Growth and Electrical Characterization of the Lightly-Doped Thick 4H-SiC Epilayers Tsuchida, H., Kamata, I., Jikimoto, T., Izumi, K. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12