Comparison of the Planar-JBS against the Trench-MOS Rectifier-Design Based on 4H-SiC for 3.3 kV Applications

Comparison of the Planar-JBS against the Trench-MOS Rectifier-Design Based on 4H-SiC for 3.3 kV Applications

Author(s):: H. Bartolf
Publication title:: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France
Title of ser.:: Materials science forum
Ser. no.:: 821-823
Pub. Year:: 2015
Page(from):: 604
Page(to):: 607
Pages:: 4
Pub. info.:: Aedermannsdorf, Switzerland: Trans Tech Publications
ISSN:: 02555476
Language:: English
Call no.:: M23650
Type:: Conference Proceedings

Details

TDL ID:	ZA00054285
Series ID:	PA00000012
Conf. info. (Name):	European Conference on Silicon Carbide & Related Materials (ECSCRM 2014)
Conf. info. (Number):	2014
Conf. info. (Venue):	Grenoble, France
Conf. info. (Date):	2014.09.21-2014.09.25
Note for article:	European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France

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