Basal Plane Dislocations Created in 4H-SiC Epitaxy by Implantation and Activation Anneal

Basal Plane Dislocations Created in 4H-SiC Epitaxy by Implantation and Activation Anneal

Author(s):

Publication title:

Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France

Title of ser.:

Materials science forum

Ser. no.:

821-823

Pub. Year:

2015

Page(from):

387

Page(to):

390

Pages:

4

Pub. info.:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00054285
Series ID:	PA00000012
Conf. info. (Name):	European Conference on Silicon Carbide & Related Materials (ECSCRM 2014)
Conf. info. (Number):	2014
Conf. info. (Venue):	Grenoble, France
Conf. info. (Date):	2014.09.21-2014.09.25
Note for article:	European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France

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