Blank Cover Image

Isothermal Treatment Effects on the Carbon Vacancy in 4H Silicon Carbide

Author(s):
Publication title:
Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France
Title of ser.:
Materials science forum
Ser. no.:
821-823
Pub. Year:
2015
Page(from):
351
Page(to):
354
Pages:
4
Pub. info.:
Aedermannsdorf, Switzerland: Trans Tech Publications
ISSN:
02555476
Language:
English
Call no.:
M23650
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings Controlling the Carbon Vacancy Concentration in 4H-SiC Subjected to High Temperature Treatment

H.M. Ayedh, R. Nipoti, A. Hallén, B.G. Svensson

Trans Tech Publications
7 Conference Proceedings Range Distributions of Implanted Ions in Silicon Carbide

Janson, M.S., Linnarsson, M.K., Hallen, A., Svensson, B.G.

Trans Tech Publications
2 Conference Proceedings Formation and Annihilation of Carbon Vacancies in 4H-SiC

H.M. Ayedh, V. Bobal, R. Nipoti, A. Hallén, B.G. Svensson

Trans Tech Publications
8 Conference Proceedings Range Distributions of Implanted Ions in Silicon Carbide

Janson, M.S., Linnarsson, M.K., Hallen, A., Svensson, B.G.

Trans Tech Publications
3 Conference Proceedings Formation of D-Center in p-Type 4H-SiC Epi-Layers during High Temperature Treatments

H.M. Ayedh, N. Iwamoto, R. Nipoti, A. Hallén, B.G. Svensson

Trans Tech Publications
9 Conference Proceedings X-Ray and AFM Analysis of Al2O3 Deposited by ALCVD on n-Type 4H-SiC

U. Grossner, M. Servidori, M. Avice, O. Nilsen, H. Fjellvag, R. Nipoti, B.G. Svensson

Trans Tech Publications
4 Conference Proceedings DLTS Study on Al+ Ion Implanted and 1950°C Annealed p-i-n 4H-SiC Vertical Diodes

H.M. Ayedh, M. Puzzanghera, B.G. Svensson, R. Nipoti

Trans Tech Publications
10 Conference Proceedings Doping of Silicon Carbide by Ion Implantation

Svensson, B.G., Hallen, A., Linnarsson, M.K., Kuznetsov, A.Yu., Janson, M.S, Aberg, D., Oesterman, J., Persson, P.O.A., …

Trans Tech Publications
5 Conference Proceedings Depth-Resolved Carrier Lifetime Measurements in 4H-SiC Epilayers Monitoring Carbon Vacancy Elimination

A. Galeckas, H.M. Ayedh, J.P. Bergman, B.G. Svensson

Trans Tech Publications
11 Conference Proceedings Lattice Disorder Effects on the Vacancy-Oxygen Center in Ion-Irradiated Silicon

Keskitalo, N., Hallen, A., Lalita, J., Svensson, B. G.

MRS - Materials Research Society
6 Conference Proceedings Deep Level Characterization of 5 MeV Proton Irradiated SiC PiN Diodes

G. Alfieri, A. Mihaila, H.M. Ayedh, B.G. Svensson, P. Hazdra

Trans Tech Publications
12 Conference Proceedings Channeling Measurements of Ion Implantation Damage in 4H-SiC

Kuznetsov, A.Yu., Janson, M.S., Hallen, A., Svensson, B.G., Jagadish, C., Gruenleitner, H., Pensl, G.

Trans Tech Publications
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12