Comparison of 600V Si, SiC and GaN Power Devices
- Author(s):
- Publication title:
- Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan
- Title of ser.:
- Materials science forum
- Ser. no.:
- 778-780
- Pub. Year:
- 2014
- Pt.:
- 2
- Page(from):
- 971
- Page(to):
- 974
- Pages:
- 4
- Pub. info.:
- Aedermannsdorf, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- Language:
- English
- Call no.:
- M23650
- Type:
- Conference Proceedings
Similar Items:
Trans Tech Publications |
Trans Tech Publications |
2
Conference Proceedings
Comparative Evaluation of Commercial 1200 V SiC Power MOSFETs Using Diagnostic I-V Characterization at Cryogenic Temperatures
Trans Tech Publications |
Trans Tech Publications |
3
Conference Proceedings
Study of Mobility Limiting Mechanisms in (11-20) 4H-SiC NO Annealed MOSFETs
Trans Tech Publications |
Materials Research Society |
4
Conference Proceedings
Effect of Activation Annealing and Reactive Ion Etching on MOS Channel Properties of (11-20) Oriented 4H-SiC
Trans Tech Publications |
Trans Tech Publications |
5
Conference Proceedings
Characteristics of MOS Capacitors with NO and POCl3 Annealed Gate Oxides on (0001), (11-20) and (000-1) 4H-SiC
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
MRS - Materials Research Society |