Blank Cover Image

SiC Epi-Channel Lateral MOSFETs

Author(s):
Publication title:
Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan
Title of ser.:
Materials science forum
Ser. no.:
778-780
Pub. Year:
2014
Pt.:
2
Page(from):
927
Page(to):
930
Pages:
4
Pub. info.:
Aedermannsdorf, Switzerland: Trans Tech Publications
ISSN:
02555476
Language:
English
Call no.:
M23650
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings High Channel Mobility 4H-SiC MOSFETs by As and P Implantation Prior to Thermal Oxidation in N2O Atmosphere

A.I. Mikhaylov, S.A. Reshanov, A. Schöner, A.V. Afanasyev, V.V. Luchinin

Trans Tech Publications
7 Conference Proceedings Comparative Study of Thermal Oxides and Post-Oxidized Deposited Oxides on n-Type Free Standing 3C-SiC

R. Esteve, A. Schöner, S.A. Reshanov, C.M. Zetterling

Trans Tech Publications
2 Conference Proceedings Negative Bias Temperature Instability of SiC MOSFET

C.T. Yen, H.T. Hung, C.C. Hung, C.Y. Lee, H.Y. Lee

Trans Tech Publications
8 Conference Proceedings 4H-SiC p-Channel MOSFETs with Epi-Channel Structure

M. Okamoto, T. Yatsuo, K. Fukuda, H. Okumura, K. Arai

Trans Tech Publications
3 Conference Proceedings Design and Technology Considerations for a RF BJT in SiC

Bakowski, M., Ericsson, P., Harris, C., Konstantinov, A., Savage, S., Schoner, A.

Trans Tech Publications
9 Conference Proceedings High Channel Mobility of 4H-SiC MOSFETs Fabricated by Over-Oxidation of the N-/Al- Coimplanted Surface Layer

S.A. Reshanov, S. Beljakowa, T. Frank, B. Zippelius, M. Krieger

Trans Tech Publications
4 Conference Proceedings Negative Bias Temperature Instability on Subthreshold Swing of SiC MOSFET

C.T. Yen, H.T. Hung, C.C. Hung, L.S. Lee, C.Y. Lee, Y.F. Huang, F.J. Hsu, T.L. Chen

Trans Tech Publications
10 Conference Proceedings Realization of Large Area 3C-SiC MOSFETs

Schoner, A., Bakowski, M., Ericsson, P., Stromberg, H., Nagasawa, H., Abe, M.

Trans Tech Publications
5 Conference Proceedings Optimization of Poly-silicon Process for 3C-SiC Based MOS Devices

R. Esteve, A. Schöner, S.A. Reshanov, C.-M. Zetterling

Materials Research Society
11 Conference Proceedings Inversion-Channel MOS Devices for Characterization of 4H-SiC/SiO2 Interfaces

A.I. Mikhaylov, A.V. Afanasyev, V.V. Luchinin, S.A. Reshanov, A. Schöner

Trans Tech Publications
6 Conference Proceedings Design Optimization of a High Temperature 1.2 kV 4H-SiC Buried Grid JBS Rectifier

H. Elahipanah, N. Thierry-Jebali, S.A. Reshanov, W. Kaplan, A. Zhang, J.K. Lim, M. Bakowski, M. Östling, A. Schöner

Trans Tech Publications
12 Conference Proceedings Realization of Large Area Vertical 3C-SiC MOSFET Devices

Schoner, A., Bakowski, M., Ericsson, P., Stromberg, H., Nagasawa, H., Abe, M.

Trans Tech Publications
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12