Blank Cover Image

Simulation, Fabrication and Characterization of 4500V 4H-SiC JBS Diode

Author(s):
Publication title:
Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan
Title of ser.:
Materials science forum
Ser. no.:
778-780
Pub. Year:
2014
Pt.:
2
Page(from):
800
Page(to):
803
Pages:
4
Pub. info.:
Aedermannsdorf, Switzerland: Trans Tech Publications
ISSN:
02555476
Language:
English
Call no.:
M23650
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings Fabrication and Application of 1.7KV SiC-Schottky Diodes

G. Chen, S. Bai, A. Liu, L. Wang, R.H. Huang

Trans Tech Publications
7 Conference Proceedings Design and Characterization of 2.5kV 4H-SiC JBS Rectifiers with Self-Aligned Guard Ring Termination

Sheridan, D.C., Merrett, J. N., Cressler, J.D., Saddow, S.E., Williams, J.R., Ellis, C., Niu, G.

Trans Tech Publications
2 Conference Proceedings Properties of homoepitaxial 4H-SiC and characteristics of Ti/4H-SiC Schottky barrier diodes

G. Chen, Z. Y. Li, S. Bai, P. Han

Society of Photo-optical Instrumentation Engineers
8 Conference Proceedings Influence of Anode Layout on the Performance of SiC JBS Diodes

R. Radhakrishnan, J.H. Zhao

Trans Tech Publications
3 Conference Proceedings Optimization of 1700V 4H-SiC JBS Diode Parameters

R.K. Sharma, P. Hazdra, S. Popelka, A. Mihaila, H. Bartolf

Trans Tech Publications
9 Conference Proceedings Fabrication and characterization of metal-ferroelectric-GaN structures

Li, W. P., Zhang, R., Yin, J., Liu, X. H., Zhou, Y. G., Shen, B., Chen, P., Chen, Z. Z., Shi, Y., Jiang, R. L., Liu, Z. …

MRS-Materials Research Society
4 Conference Proceedings Fabrication and Characterization of 4H-SiC pn Diode with Field Limiting Ring

Bahng, W., Song, G.H., Kim, H.W., Seo, K.S., Kim, N.K.

Trans Tech Publications
10 Conference Proceedings Study of 4H-SiC Junction Barrier Schottky(JBS) Diode Using Various Junction Structures

K.H. Kim, Y.H. Kang, J.H. Lee, E.S. Jung, I.H. Kang

Trans Tech Publications
5 Conference Proceedings Simulation, Fabrication and Characterization of 4H-SiC Floating Junction Schottky Barrier Diodes (Super-SBDs)

C. Ota, J. Nishio, T. Hatakeyama, T. Shinohe, K. Kojima, S.I. Nishizawa, H. Ohashi

Trans Tech Publications
11 Conference Proceedings Fabrication and Microstructure of MoSi2/Al2O3 Functionally Graded Material

Jiang, G., Bai, S., Chen, L., Li, W., Zhuang, H.

Trans Tech Publications
6 Conference Proceedings On the Influence of Active Area Design on the Performance of SiC JBS Diodes

A. Mihaila, R.A. Minamisawa, L. Knoll, V.K. Sundaramoorthy, E. Bianda, H. Bartolf, G. Alfieri, M. Rahimo

Trans Tech Publications
12 Conference Proceedings 600V-30A 4H-SiC JBS and Si IGBT Hybrid Module

Y.Z. Li, W.J. Ni, Z.Y. Li, Y. Li, C. Chen

Trans Tech Publications
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12