Investigation of Trenched and High Temperature Annealed 4H-SiC

Investigation of Trenched and High Temperature Annealed 4H-SiC

Author(s):

Publication title:

Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan

Title of ser.:

Materials science forum

Ser. no.:

778-780

Pub. Year:

2014

Pt.:

2

Page(from):

742

Page(to):

745

Pages:

4

Pub. info.:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00054253
Series ID:	PA00000012
Conf. info. (Name):	International Conference on Silicon Carbide and Related Materials (ICSCRM 2013)
Conf. info. (Number):	15th
Conf. info. (Venue):	Miyazaki, Japan
Conf. info. (Date):	2013.09.29-2013.10.04
Note for article:	15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan

Similar Items:

1 Conference Proceedings Characterization of Diverse Gate Oxides on 4H-SiC 3D Trench-MOS Structures C.T. Banzhaf, M. Grieb, A. Trautmann, A.J. Bauer, L. Frey Trans Tech Publications	7 Conference Proceedings Investigation of Rapid Thermal Annealed pn-Junctions in SiC Rambach, M., Weiss, R., Frey, L., Bauer, A.J., Ryssel, H. Trans Tech Publications
2 Conference Proceedings Influence of Diverse Post-Trench Processes on the Electrical Performance of 4H-SiC MOS Structures C.T. Banzhaf, M. Grieb, A. Trautmann, A.J. Bauer, L. Frey Trans Tech Publications	8 Conference Proceedings Influence of Annealing Parameters on Surface Roughness, Mobility and Contact Resistance of Aluminium Implanted 4H SiC H. Schmitt, V. Häublein, A.J. Bauer, L. Frey Trans Tech Publications
3 Conference Proceedings Impact of Post-Trench Processing on the Electrical Characteristics of 4H-SiC Trench-MOS Structures with Thick Top and Bottom Oxides C.T. Banzhaf, M. Grieb, M. Rambach, A.J. Bauer, L. Frey Trans Tech Publications	9 Conference Proceedings Annealing of Aluminum Implanted 4H-SiC: Comparison of Furnace and Lamp Annealing Rambach, M., Bauer, A. J., Frey, L., Friedrichs, P., Ryssel, H. Trans Tech Publications
4 Conference Proceedings Electrical Impact of the Aluminum P-Implant Annealing on Lateral MOSFET Transistors on 4H-SiC N-Epi S. Noll, D. Scholten, M. Grieb, A.J. Bauer, L. Frey Trans Tech Publications	10 Conference Proceedings Influence of the Oxidation Temperature and Atmosphere on the Reliability of Thick Gate Oxides on the 4H-SiC C(000-1) Face M. Grieb, D. Peters, A.J. Bauer, P. Friedrichs, H. Ryssel Trans Tech Publications
5 Conference Proceedings Trench-MOSFETs on 4H-SiC C.T. Banzhaf, S. Schwaiger, D. Scholten, S. Noll, M. Grieb Trans Tech Publications	11 Conference Proceedings Implementation of 4H-SiC Pin-Diodes as Nearly Linear Temperature Sensors up to 800 K towards SiC Multi-Sensor Integration C.D. Matthus, T. Erlbacher, B. Schöfer, A.J. Bauer, L. Frey Trans Tech Publications
6 Conference Proceedings Potential of 4H-SiC CMOS for High Temperature Applications Using Advanced Lateral p-MOSFETs M. Albrecht, T. Erlbacher, A.J. Bauer, L. Frey Trans Tech Publications	12 Conference Proceedings Extracting Activation and Compensation Ratio from Aluminum Implanted 4H-SiC by Modelling of Resistivity Measurements Rambach, M., Frey, L., Bauer, A.J., Ryssel, H. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12