Step-Bunching Dependence of the Lifetime of MOS Capacitor on 4° Off-Axis Si-Face 4H-SiC Epitaxial Wafers

Step-Bunching Dependence of the Lifetime of MOS Capacitor on 4° Off-Axis Si-Face 4H-SiC Epitaxial Wafers

Author(s):

Publication title:

Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan

Title of ser.:

Materials science forum

Ser. no.:

778-780

Pub. Year:

2014

Pt.:

1

Page(from):

611

Page(to):

614

Pages:

4

Pub. info.:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00054253
Series ID:	PA00000012
Conf. info. (Name):	International Conference on Silicon Carbide and Related Materials (ICSCRM 2013)
Conf. info. (Number):	15th
Conf. info. (Venue):	Miyazaki, Japan
Conf. info. (Date):	2013.09.29-2013.10.04
Note for article:	15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan

Similar Items:

1 Conference Proceedings Origin Analyses of Trapezoid-Shape Defects in 4-Deg.-off 4H-SiC Epitaxial Wafers by Synchrotron X-Ray Topography T. Yamashita, H. Matsuhata, Y. Miyasaka, K. Momose, T. Sato Trans Tech Publications	7 Conference Proceedings Short-Length Step Morphology on 4° Off Si-Face Epitaxial Surface Grown on 4H-SiC Substrate K. Momose, M. Odawara, Y. Tajima, H. Koizumi, D. Muto Trans Tech Publications
2 Conference Proceedings High-Quality 100/150 mm p-Type 4H-SiC Epitaxial Wafer for High-Voltage Bipolar Devices N. Ishibashi, K. Fukada, A. Bandoh, K. Momose, H. Osawa Trans Tech Publications	8 Conference Proceedings Processing and Characterization of MOS Capacitors Fabricated on 2° -Off Axis 4H-SiC Epilayers M. Vivona, P. Fiorenza, T. Sledziewski, A. Gkanatsiou, M. Krieger Trans Tech Publications
3 Conference Proceedings Characterization of (4,4)- and (5,3)-Type Stacking-Faults in 4deg.-Off 4H-SiC Epitaxial Wafers by Synchrotron X-Ray Topography and by Photo-Luminescence … T. Yamashita, H. Matsuhata, Y. Miyasaka, M. Odawara, K. Momose Trans Tech Publications	9 Conference Proceedings Impact of the Wafer Quality on the Reliability of MOS Structure on the C-Face of 4H-SiC T. Hatakeyama, T. Suzuki, J. Senzaki, K. Fukuda, H. Matsuhata Trans Tech Publications
4 Conference Proceedings 4×10¹⁴ cm^-3) 4H-SiC Epilayers K. Fukada, N. Ishibashi, Y. Miyasaka, A. Bandoh, K. Momose, H. Osawa Trans Tech Publications	10 Conference Proceedings Starting Point of Step-Bunching Defects on 4H-SiC Si-Face Substrates K. Tamura, M. Sasaki, C. Kudou, T. Yamashita, H. Sako Trans Tech Publications
5 Conference Proceedings Origin Analyses of Obtuse Triangular Defects in 4deg.-Off 4H-SiC Epitaxial Wafers by Electron Microscopy and by Synchrotron X-Ray Topography T. Yamashita, H. Matsuhata, Y. Miyasaka, H. Ohshima, M. Sekine Trans Tech Publications	11 Conference Proceedings SEM and ECC Imaging Study of Step-Bunched Structure on 4H-SiC Epitaxial Layers Y. Tabuchi, M. Sonoda, K. Ashida, T. Kaneko, N. Ohtani, M. Katsuno, S. Sato, H. Tsuge, T. Fujimoto Trans Tech Publications
6 Conference Proceedings Characterization of Comet-Shaped Defects on C-Face 4H-SiC Epitaxial Wafers T. Yamashita, H. Matsuhata, T. Sekiguchi, K. Momose, H. Osawa Trans Tech Publications	12 Conference Proceedings Growth of 4H-SiC Epitaxial Layers on 4° Off-Axis Si-Face Substrates A. Henry, S. Leone, H. Pedersen, O. Kordina, E. Janzén Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12