Estimation of Surface Recombination Velocities for n-Type 4H-SiC Surfaces Treated by Various Processes

Estimation of Surface Recombination Velocities for n-Type 4H-SiC Surfaces Treated by Various Processes

Author(s):

Publication title:

Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan

Title of ser.:

Materials science forum

Ser. no.:

778-780

Pub. Year:

2014

Pt.:

1

Page(from):

432

Page(to):

435

Pages:

4

Pub. info.:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00054253
Series ID:	PA00000012
Conf. info. (Name):	International Conference on Silicon Carbide and Related Materials (ICSCRM 2013)
Conf. info. (Number):	15th
Conf. info. (Venue):	Miyazaki, Japan
Conf. info. (Date):	2013.09.29-2013.10.04
Note for article:	15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan

Similar Items:

1 Conference Proceedings Correlation between Microwave Reflectivity and Excess Carrier Concentrations in 4H-SiC M. Kato, Y. Mori, M. Ichimura Trans Tech Publications	7 Conference Proceedings Characteristics of Schottky Diodes on 6H-SiC Surfaces after Sacrificial Anodic Oxidation Kato, M., Ichimura, M., Arai, E. Trans Tech Publications
2 Conference Proceedings Excess Carrier Lifetimes in a Bulk p-Type SiC Wafer Measured by the Microwave Photoconductivity Decay Method M. Kawai, T. Mori, M. Kato, M. Ichimura, S. Sumie, H. Hashizume Trans Tech Publications	8 Conference Proceedings Characteristics of Schottky Diodes on 6H-SiC Surfaces after Sacrificial Anodic Oxidation Kato, M., Ichimura, M., Arai, E. Trans Tech Publications
3 Conference Proceedings Correlation between Schottky Contact Characteristics and Regions with a Low Barrier Height Revealed by the Electrochemical Deposition on 4H-SiC M. Kato, H. Ono, M. Ichimura Trans Tech Publications	9 Conference Proceedings Improvement of Schottky Contact Characteristics by Anodic Oxidation of 4H-SiC M. Kimura, M. Kato, M. Ichimura Trans Tech Publications
4 Conference Proceedings Identification of Structures of the Deep Levels in 4H-SiC H. Nakane, M. Kato, M. Ichimura, T. Ohshima Trans Tech Publications	10 Conference Proceedings Growth Rate and Surface Morphology of 4H-SiC Single Crystal Grown under Various Supersaturations Using Si-C Solution N. Komatsu, T. Mitani, T. Takahashi, M. Okamura, T. Kato Trans Tech Publications
5 Conference Proceedings Deep Levels in P-Type 4H-SiC Induced by Low-Energy Electron Irradiation K. Yoshihara, M. Kato, M. Ichimura, T. Hatayama, T. Ohshima Trans Tech Publications	11 Conference Proceedings Electrochemical Etching of n-Type 6H-SiC Using Aqueous KOH Solutions Kato, M., Ichimura, M., Arai, E., Ramasamy, P. Trans Tech Publications
6 Conference Proceedings Characterization of the Excess Carrier Lifetime of As-Grown and Electron Irradiated Epitaxial p-Type 4H-SiC Layers by the Microwave Photoconductivity Decay … V. Matsushita, M. Kato, M. Ichimura, T. Hatayama, T. Ohshima Trans Tech Publications	12 Conference Proceedings Delineation of Defects Reducing Schottky Barrier Heights on 4H-SiC by the Electrochemical Deposition M. Kato, K. Ogawa, M. Ichimura Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12