Correlation between Microwave Reflectivity and Excess Carrier Concentrations in 4H-SiC

Correlation between Microwave Reflectivity and Excess Carrier Concentrations in 4H-SiC

Author(s):

Publication title:

Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan

Title of ser.:

Materials science forum

Ser. no.:

778-780

Pub. Year:

2014

Pt.:

1

Page(from):

293

Page(to):

296

Pages:

4

Pub. info.:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00054253
Series ID:	PA00000012
Conf. info. (Name):	International Conference on Silicon Carbide and Related Materials (ICSCRM 2013)
Conf. info. (Number):	15th
Conf. info. (Venue):	Miyazaki, Japan
Conf. info. (Date):	2013.09.29-2013.10.04
Note for article:	15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan

Similar Items:

1 Conference Proceedings Excess Carrier Lifetimes in a Bulk p-Type SiC Wafer Measured by the Microwave Photoconductivity Decay Method M. Kawai, T. Mori, M. Kato, M. Ichimura, S. Sumie, H. Hashizume Trans Tech Publications	7 Conference Proceedings Excess Carrier Lifetime Measurements for GaN on Sapphire Substrates with Various Doping Concentrations and Surface Conditions by the Microwave Photoconductivity … Kato, Masashi, Watanabe, Hideki, Ichimura, Masaya, Arai, Eisuke Materials Research Society
2 Conference Proceedings Correlation between Strain and Excess Carrier Lifetime in a 3C-SiC Wafer A. Yoshida, M. Kato, M. Ichimura Trans Tech Publications	8 Conference Proceedings Identification of Structures of the Deep Levels in 4H-SiC H. Nakane, M. Kato, M. Ichimura, T. Ohshima Trans Tech Publications
3 Conference Proceedings Excess Carrier Lifetime Mapping for Bulk SiC Wafers by Microwave Photoconductivity Decay Method and Its Relationship with Structural Defect Distribution Kato, M., Ichimura, M., Arai, E., Sumie, S., Hashizume, H. Trans Tech Publications	9 Conference Proceedings Improvement of Schottky Contact Characteristics by Anodic Oxidation of 4H-SiC M. Kimura, M. Kato, M. Ichimura Trans Tech Publications
4 Conference Proceedings Characterization of the Excess Carrier Lifetime of As-Grown and Electron Irradiated Epitaxial p-Type 4H-SiC Layers by the Microwave Photoconductivity Decay … V. Matsushita, M. Kato, M. Ichimura, T. Hatayama, T. Ohshima Trans Tech Publications	10 Conference Proceedings Impact of Carrier Lifetime on Efficiency of Photolytic Hydrogen Generation by p-Type SiC K. Miyake, T. Yasuda, M. Kato, M. Ichimura, T. Hatayama Trans Tech Publications
5 Conference Proceedings Estimation of Surface Recombination Velocities for n-Type 4H-SiC Surfaces Treated by Various Processes Y. Mori, M. Kato, M. Ichimura Trans Tech Publications	11 Conference Proceedings Delineation of Defects Reducing Schottky Barrier Heights on 4H-SiC by the Electrochemical Deposition M. Kato, K. Ogawa, M. Ichimura Trans Tech Publications
6 Conference Proceedings Correlation between Schottky Contact Characteristics and Regions with a Low Barrier Height Revealed by the Electrochemical Deposition on 4H-SiC M. Kato, H. Ono, M. Ichimura Trans Tech Publications	12 Conference Proceedings Deep Levels in P-Type 4H-SiC Induced by Low-Energy Electron Irradiation K. Yoshihara, M. Kato, M. Ichimura, T. Hatayama, T. Ohshima Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12