50 µm-Thick 100 mm 4H-SiC Epitaxial Layer Growth by Warm-Wall Planetary Reactor

50 µm-Thick 100 mm 4H-SiC Epitaxial Layer Growth by Warm-Wall Planetary Reactor

Author(s):

Publication title:

Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan

Title of ser.:

Materials science forum

Ser. no.:

778-780

Pub. Year:

2014

Pt.:

1

Page(from):

163

Page(to):

166

Pages:

4

Pub. info.:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00054253
Series ID:	PA00000012
Conf. info. (Name):	International Conference on Silicon Carbide and Related Materials (ICSCRM 2013)
Conf. info. (Number):	15th
Conf. info. (Venue):	Miyazaki, Japan
Conf. info. (Date):	2013.09.29-2013.10.04
Note for article:	15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan

Similar Items:

1 Conference Proceedings 150 mm 4H-SiC Epitaxial Layer Growth in a Warm-Wall Planetary Reactor Y.Q. Sun, G. Feng, L.P. Lv, W.N. Qian, Y.Y. Li Trans Tech Publications	7 Conference Proceedings Latest SiC Epitaxial Layer Growth Results in a High-Throughput 6×150 mm Warm-Wall Planetary Reactor A.A. Burk, D. Tsvetkov, M.J. O'Loughlin, S. Ustin, L. Garrett Trans Tech Publications
2 Conference Proceedings Elimination of BPD in 5sim;30um Thick 4H-SiC Epitaxial Layers Grown in a Warm-Wall Planetary Reactor G. Feng, Y.Q. Sun, W.N. Qian, L.P. Lv, J.H. Zhao Trans Tech Publications	8 Conference Proceedings Large Area SiC Epitaxial Layer Growth in a Warm-Wall Planetary VPE Reactor Burk, A. A., O'Loughlin, M. J., Paisley, M. J., Powell, A. R., Brady, M. F., Leonard, R. T., Muller, S. G., Allen, S. T. Trans Tech Publications
3 Conference Proceedings Formation and Reduction of Large Growth Pits on 100 mm 4° 4H-SiC Y.Q. Sun, G. Feng, J.Y. Kang, W.N. Qian, L.P. Lv Trans Tech Publications	9 Conference Proceedings Micro-Raman Investigation of Defects in a 4H-SiC Homoepilayer X.F. Liu, G.S. Sun, J.M. Li, Y.M. Zhao, J.Y. Li, L. Wang, W.S. Zhao, M.C. Luo, Y.P. Zeng Trans Tech Publications
4 Conference Proceedings 10 × 100 mm 4H-SiC Epitaxial Growth by Warm-Wall Planetary Reactor L. Dong, G.S. Sun, J. Yu, G.G. Yan, W.S. Zhao Trans Tech Publications	10 Conference Proceedings SiC Warm-Wall Planetary VP E Growth on Multiple 100-mm Diameter Wafers Burk, A.A., O'Loughlin, M.J., Paisley, M.J., Powell, A.R., Brady, M.F, Leonard, R.T., McClure, D.A. Trans Tech Publications
5 Conference Proceedings Progress in Large-Area 4H-SiC Epitaxial Layer Growth in a Warm-Wall Planetary Reactor B. Thomas, D.M. Hansen, J. Zhang, M.J. Loboda, J. Uchiyama Trans Tech Publications	11 Conference Proceedings Growth of Thick Epitaxial 4H-SiC Layers by Chemical Vapor Deposition Kordina,O., Irvine,K., Sumakeris,J., Kong,H.S., Paisley,M.J., ,C.H.Carter,Jr. Trans Tech Publications
6 Conference Proceedings SiC Epitaxial Layer Growth in a 6x150 mm Warm-Wall Planetary Reactor A.A. Burk, D. Tsvetkov, D. Barnhardt, M.J. O'Loughlin, L. Garrett Trans Tech Publications	12 Conference Proceedings Morphology Control for Growth of Thick Epitaxial 4H SiC Layers Zhang, J., Ellison, A., Janzen, E. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12