Blank Cover Image

Effect of Process Parameters on Dislocation Density in Thick 4H-SiC Epitaxial Layers Grown by Chloride-Based CVD on 4° Off-Axis Substrates

Author(s):
Publication title:
Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan
Title of ser.:
Materials science forum
Ser. no.:
778-780
Pub. Year:
2014
Pt.:
1
Page(from):
159
Page(to):
162
Pages:
4
Pub. info.:
Aedermannsdorf, Switzerland: Trans Tech Publications
ISSN:
02555476
Language:
English
Call no.:
M23650
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings Growth of 4H-SiC Epitaxial Layers on 4° Off-Axis Si-Face Substrates

A. Henry, S. Leone, H. Pedersen, O. Kordina, E. Janzén

Trans Tech Publications
7 Conference Proceedings Chloride-Based CVD of 4H-SiC at High Growth Rates on Substrates with Different Off-Angles

S. Leone, H. Pedersen, F.C. Beyer, S. Andersson, O. Kordina

Trans Tech Publications
2 Conference Proceedings Homoepitaxial Growth of 4H-SiC on On-Axis Si-Face Substrates Using Chloride-Based CVD

S. Leone, H. Pedersen, A. Henry, O. Kordina, E. Janzén

Trans Tech Publications
8 Conference Proceedings Carrot Defect Control in Chloride-Based CVD through Optimized Ramp up Conditions

M. Yazdanfar, S. Leone, H. Pedersen, O. Kordina, A. Henry

Trans Tech Publications
3 Conference Proceedings Growth of Thick 4H-SiC Epitaxial Layers on On-Axis Si-Face Substrates with HCl Addition

S. Leone, H. Pedersen, A. Henry, S.P. Rao, O. Kordina

Trans Tech Publications
9 Conference Proceedings Defects in 4H-SiC Layers Grown by Chloride-Based Epitaxy

F.C. Beyer, H. Pedersen, A. Henry, E. Janzen

Trans Tech Publications
4 Conference Proceedings Properties of Thick n- and p-Type Epitaxial Layers of 4H-SiC Grown by Hot-Wall CVD on Off- and On-Axis Substrates

ul Hassan, J., Hallin, C., Bergman, J.P., Janzen, E.

Trans Tech Publications
10 Conference Proceedings Morphology Optimization of Very Thick 4H-SiC Epitaxial Layers

M. Yazdanfar, P. Stenberg, I.D. Booker, Ivan.G Ivanov, H. Pedersen

Trans Tech Publications
5 Conference Proceedings Surface Preparation of 4 ° Off-Axis 4H-SiC Substrate for Epitaxial Growth

X. Li, J. ul Hassan, O. Kordina, E. Janzén, A. Henry

Trans Tech Publications
11 Conference Proceedings Chloride-Based CVD at High Growth Rates on 3″ Vicinal Off-Angles SiC Wafers

S. Leone, A. Henry, O. Kordina, E. Janzén

Trans Tech Publications
6 Conference Proceedings 4H-SiC Epitaxial Layers Grown on On-Axis Si-Face Substrate

J. Hassan, J.P. Bergman, A. Henry, H. Pedersen, P.J. McNally, E. Janzen

Trans Tech Publications
12 Conference Proceedings Concentrated Chloride-Based Epitaxial Growth of 4H-SiC

A. Henry, S. Leone, S. Andersson, O. Kordina, E. Janzén

Trans Tech Publications
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12