15 kV, Large Area (1 cm<sup>2</sup>), 4H-SiC p-Type Gate Turn-Off Thyristors

15 kV, Large Area (1 cm²), 4H-SiC p-Type Gate Turn-Off Thyristors

Author(s):

Publication title:

Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation

Title of ser.:

Materials science forum

Ser. no.:

740-742

Pub. Year:

2013

Page(from):

978

Page(to):

981

Pages:

4

Pub. info.:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00054223
Series ID:	PA00000012
Conf. info. (Name):	European Conference on Silicon Carbide and Related Materials (ECSCRM 2012)
Conf. info. (Number):	9th
Conf. info. (Venue):	St. Petersburg, Russian Federation
Conf. info. (Date):	2012.09.02-2012.09.06
Note for article:	9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation

Similar Items:

1 Conference Proceedings 16 kV, 1 cm², 4H-SiC PiN Diodes for Advanced High-Power and High-Temperature Applications L. Cheng, A.K. Agarwal, M. O'Loughlin, C. Capell, K. Lam Trans Tech Publications	7 Conference Proceedings 15 kV IGBTs in 4H-SiC S.H. Ryu, C. Capell, C. Jonas, M. O'Loughlin, L. Cheng Trans Tech Publications
2 Conference Proceedings 12 kV, 1 cm² SiC GTO Thyristors with Negative Bevel Termination Q.J. Zhang, A.K. Agarwal, C. Capell, L. Cheng, M.J. O'Loughlin Trans Tech Publications	8 Conference Proceedings Development of Large Area (up to 1.5 cm²) 4H-SiC 10 kV Junction Barrier Schottky Rectifiers B.A. Hull, J.J. Sumakeris, M.J. O'Loughlin, Q.J. Zhang, J. Richmond Trans Tech Publications
3 Conference Proceedings 9 kV, 1 cm² SiC Gate Turn-Off Thyristors A.K. Agarwal, Q.C.J. Zhang, R. Callanan, C. Capell, A.A. Burk Trans Tech Publications	9 Conference Proceedings High-Temperature Performance of 1200 V, 200 A 4H-SiC Power DMOSFETs L. Cheng, S.H. Ryu, A.K. Agarwal, M.J. O'Loughlin, A.A. Burk Trans Tech Publications
4 Conference Proceedings 4H-SiC Gate Turn-Off(GTO)Thyristor Development Casady,J.B., Agarwal,A.K., Rowland,L.B., Siergiej,R.R., Seshadri,S., Mani,S., Barrows,J., Piceone,D., Sanger,P.A., … Trans Tech Publications	10 Conference Proceedings A 1cm x 1cm, 5kV, 100A, 4H-SiC Thyristor Chip for High Current Modules Agarwal, A.K., Krishnaswami, S., Damsky, B., Richmond, J., Capell, C., Ryu, S.H., Palmour, J.W. Trans Tech Publications
5 Conference Proceedings Turn-off Performance of a 2.6 kV 4H-SiC Asymmetrical GTO Thyristor Agarwal, A.K., Ivanov, P.A., Levinshtein, M.E., Palmour, J.W., Rumyantsev, S.L., Ryu, S.H., Shur, M.S. Trans Tech Publications	11 Conference Proceedings 2600 V, 12 A, 4H-SiC, Asymmetrical Gate Turn Off (GTO) Thyristor Development Agarwal, A., Ryu, S. -H., Singh, R., Kordina, O., Palmour, J. W. Trans Tech Publications
6 Conference Proceedings A 10 kV 4H-SiC Bipolar Turn Off Thyristor (BTO) with Positive Temperature Coefficient of VF, Current Saturation Capability and Fast Switching Speed Q.C.J. Zhang, J. Richmond, C. Capell, A.K. Agarwal, J.W. Palmour Trans Tech Publications	12 Conference Proceedings 4H-SiC Gate Turn-Off Thyristor Designs for Very High Power Control Shah, P. B., Geil, B. R., Jones, K. A., Griffin, T. E., Derenge, M. A. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12

15 kV, Large Area (1 cm2), 4H-SiC p-Type Gate Turn-Off Thyristors

Similar Items:

15 kV, Large Area (1 cm²), 4H-SiC p-Type Gate Turn-Off Thyristors