Characterization of Diverse Gate Oxides on 4H-SiC 3D Trench-MOS Structures

Characterization of Diverse Gate Oxides on 4H-SiC 3D Trench-MOS Structures

Author(s):

Publication title:

Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation

Title of ser.:

Materials science forum

Ser. no.:

740-742

Pub. Year:

2013

Page(from):

691

Page(to):

694

Pages:

4

Pub. info.:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00054223
Series ID:	PA00000012
Conf. info. (Name):	European Conference on Silicon Carbide and Related Materials (ECSCRM 2012)
Conf. info. (Number):	9th
Conf. info. (Venue):	St. Petersburg, Russian Federation
Conf. info. (Date):	2012.09.02-2012.09.06
Note for article:	9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation

Similar Items:

1 Conference Proceedings Influence of Diverse Post-Trench Processes on the Electrical Performance of 4H-SiC MOS Structures C.T. Banzhaf, M. Grieb, A. Trautmann, A.J. Bauer, L. Frey Trans Tech Publications	7 Conference Proceedings Electrical Impact of the Aluminum P-Implant Annealing on Lateral MOSFET Transistors on 4H-SiC N-Epi S. Noll, D. Scholten, M. Grieb, A.J. Bauer, L. Frey Trans Tech Publications
2 Conference Proceedings Impact of Post-Trench Processing on the Electrical Characteristics of 4H-SiC Trench-MOS Structures with Thick Top and Bottom Oxides C.T. Banzhaf, M. Grieb, M. Rambach, A.J. Bauer, L. Frey Trans Tech Publications	8 Conference Proceedings Electrical Characterization and Reliability of Nitrided-Gate Insulators for N- and P-Type 4H-SiC MIS Devices M. Noborio, M. Grieb, A.J. Bauer, D. Peters, P. Friedrichs Trans Tech Publications
3 Conference Proceedings Investigation of Trenched and High Temperature Annealed 4H-SiC C.T. Banzhaf, M. Grieb, A. Trautmann, A.J. Bauer, L. Frey Trans Tech Publications	9 Conference Proceedings Ion Implanted 4H-SiC UV Pin-Diodes for Solar Radiation Detection - Simulation and Characterization C.D. Matthus, T. Erlbacher, A. Burenkov, A.J. Bauer, L. Frey Trans Tech Publications
4 Conference Proceedings Trench-MOSFETs on 4H-SiC C.T. Banzhaf, S. Schwaiger, D. Scholten, S. Noll, M. Grieb Trans Tech Publications	10 Conference Proceedings Effect of Shallow n-Doping on Field Effect Mobility in p-Doped Channels of 4H-SiC MOS Field Effect Transistors S. Noll, M. Rambach, M. Grieb, D. Scholten, A.J. Bauer Trans Tech Publications
5 Conference Proceedings Influence of the Oxidation Temperature and Atmosphere on the Reliability of Thick Gate Oxides on the 4H-SiC C(000-1) Face M. Grieb, D. Peters, A.J. Bauer, P. Friedrichs, H. Ryssel Trans Tech Publications	11 Conference Proceedings Comparison of the Threshold-Voltage Stability of SiC MOSFETs with Thermally Grown and Deposited Gate Oxides M. Grieb, M. Noborio, D. Peters, A.J. Bauer, P. Friedrichs Trans Tech Publications
6 Conference Proceedings Electrical Characterization of MOS Structures with Deposited Oxides Annealed in N2O or NO M. Grieb, M. Noborio, D. Peters, A.J. Bauer, P. Friedrichs Trans Tech Publications	12 Conference Proceedings Potential of 4H-SiC CMOS for High Temperature Applications Using Advanced Lateral p-MOSFETs M. Albrecht, T. Erlbacher, A.J. Bauer, L. Frey Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12