Bulk 3C-SiC Crystal by Top Seeded Solution Growth Method

Bulk 3C-SiC Crystal by Top Seeded Solution Growth Method

Author(s):

Publication title:

Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation

Title of ser.:

Materials science forum

Ser. no.:

740-742

Pub. Year:

2013

Page(from):

311

Page(to):

314

Pages:

4

Pub. info.:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00054223
Series ID:	PA00000012
Conf. info. (Name):	European Conference on Silicon Carbide and Related Materials (ECSCRM 2012)
Conf. info. (Number):	9th
Conf. info. (Venue):	St. Petersburg, Russian Federation
Conf. info. (Date):	2012.09.02-2012.09.06
Note for article:	9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation

Similar Items:

1 Conference Proceedings 3C-SiC Crystal on Sapphire by Solution Growth Method K. Shibata, S. Harada, T. Ujihara Trans Tech Publications	7 Conference Proceedings Increase in the Growth Rate by Rotating the Seed Crystal at High Speed during the Solution Growth of SiC T. Umezaki, D. Koike, A. Horio, S. Harada, T. Ujihara Trans Tech Publications
2 Conference Proceedings Polytype and Crystal Quality of SiC Crystals Grown on 3C-SiC by Seeded Solution Method K. Seki, R. Tanaka, T. Ujihara, Y. Takeda Trans Tech Publications	8 Conference Proceedings Solution Growth of SiC Crystals in Si-Ti and Si-Ge-Ti Solvents R. Tanaka, K. Seki, S. Komiyama, T. Ujihara, Y. Takeda Trans Tech Publications
3 Conference Proceedings Polytype Stability of 4H-SiC Seed Crystal on Solution Growth K. Seki, S. Kozawa, Y. Yamamoto, T. Ujihara, Y. Takeda Trans Tech Publications	9 Conference Proceedings Control of Interface Shape by Non-Axisymmetric Solution Convection in Top-Seeded Solution Growth of SiC Crystal D. Koike, T. Umezaki, K. Murayama, K. Aoyagi, S. Harada Trans Tech Publications
4 Conference Proceedings Reduction of Threading Screw Dislocation Utilizing Defect Conversion during Solution Growth of 4H-SiC S. Harada, Y. Yamamoto, K. Seki, T. Ujihara Trans Tech Publications	10 Conference Proceedings Defect Evaluation of SiC Crystal Grown by Solution Method: The Study by Synchrotron X-Ray Topography and Etching Method S. Kozawa, K. Seki, Y. Yamamoto, T. Ujihara, Y. Takeda Trans Tech Publications
5 Conference Proceedings Conversion Mechanism of Threading Screw Dislocation during SiC Solution Growth T. Ujihara, S. Kozawa, K. Seki, Y. Yamamoto, S. Harada Trans Tech Publications	11 Conference Proceedings High Temperature Solution Growth on Free-Standing (001) 3C-SiC Epilayers R. Tanaka, K. Seki, T. Ujihara, Y. Takeda Trans Tech Publications
6 Conference Proceedings Stable Growth of 4H-SiC Single Polytype by Controlling the Surface Morphology Using a Temperature Gradient in Solution Growth Y. Yamamoto, K. Seki, S. Kozawa, S. Harada, T. Ujihara Trans Tech Publications	12 Conference Proceedings Improvement of Surface Morphology by Solution Flow Control in Solution Growth of SiC on Off-Axis Seeds T. Umezaki, D. Koike, S. Harada, T. Ujihara Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12