3C-SiC Heteroepitaxy on Hexagonal SiC Substrates
- Author(s):
- Publication title:
- Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation
- Title of ser.:
- Materials science forum
- Ser. no.:
- 740-742
- Pub. Year:
- 2013
- Page(from):
- 257
- Page(to):
- 262
- Pages:
- 6
- Pub. info.:
- Aedermannsdorf, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- Language:
- English
- Call no.:
- M23650
- Type:
- Conference Proceedings
Similar Items:
1
Conference Proceedings
Structural Investigation of Heteroepitaxial 3C-SiC Grown on 4H-SiC Substrates
Trans Tech Publications |
7
Conference Proceedings
Characterization and Comparison of 4H-SiC(1120) and 4H-SiC(0001)8° Off-Axis Substrates and Homoepitaxial Films
Materials Research Society |
Trans Tech Publications |
8
Conference Proceedings
Formation of an Interfacial Buffer Layer for 3C-SiC Heteroepitaxy on AlN/Si Substrates
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
10
Conference Proceedings
Chloride-Based CVD of 4H-SiC at High Growth Rates on Substrates with Different Off-Angles
Trans Tech Publications |
5
Conference Proceedings
Growth of Homoepitaxial Films on 4H-SiC(11-20)and 8° Off-Axis 4H-SiC(0001) Substrates and their Characterization
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |