Blank Cover Image

Surface Preparation of 4 ° Off-Axis 4H-SiC Substrate for Epitaxial Growth

Author(s):
Publication title:
Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation
Title of ser.:
Materials science forum
Ser. no.:
740-742
Pub. date:
2013
Page(from):
225
Page(to):
228
Pages:
4
Pub. info.:
Aedermannsdorf, Switzerland: Trans Tech Publications
ISSN:
02555476
Language:
English
Call no.:
M23650
Type:
Conference Proceedings

Similar Items:

A. Henry, S. Leone, H. Pedersen, O. Kordina, E. Janzén

Trans Tech Publications

ul Hassan, J., Hallin, C., Bergman, J.P., Janzen, E.

Trans Tech Publications

M. Yazdanfar, H. Pedersen, O. Kordina, E. Janzén

Trans Tech Publications

S. Leone, H. Pedersen, A. Henry, O. Kordina, E. Janzén

Trans Tech Publications

X. Li, E. Janzén, A. Henry

Trans Tech Publications

J. Hassan, J.P. Bergman, A. Henry, H. Pedersen, P.J. McNally, E. Janzen

Trans Tech Publications

4 Conference Proceedings CVD Growth of 3C-SiC on 4H-SiC Substrate

A. Henry, X. Li, S. Leone, O. Kordina, E. Janzén

Trans Tech Publications

S. Leone, H. Pedersen, A. Henry, S.P. Rao, O. Kordina

Trans Tech Publications

L. Lilja, J. Ul Hassan, E. Janzén, P. Bergman

Trans Tech Publications

J. Hassan, J.P. Bergman, A. Henry, E. Janzén

Trans Tech Publications

L. Lilja, J. Ul Hassan, E. Janzén, P. Bergman

Trans Tech Publications

A. Henry, S. Leone, S. Andersson, O. Kordina, E. Janzén

Trans Tech Publications

1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12