On-Axis Homoepitaxial Growth of 4H-SiC PiN Structure for High Power Applications

On-Axis Homoepitaxial Growth of 4H-SiC PiN Structure for High Power Applications

Author(s):

Publication title:

Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation

Title of ser.:

Materials science forum

Ser. no.:

740-742

Pub. Year:

2013

Page(from):

173

Page(to):

176

Pages:

4

Pub. info.:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00054223
Series ID:	PA00000012
Conf. info. (Name):	European Conference on Silicon Carbide and Related Materials (ECSCRM 2012)
Conf. info. (Number):	9th
Conf. info. (Venue):	St. Petersburg, Russian Federation
Conf. info. (Date):	2012.09.02-2012.09.06
Note for article:	9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation

Similar Items:

1 Conference Proceedings Influence of Growth Mechanism on Carrier Lifetime in On-Axis Homoepitaxial Layers of 4H-SiC J. Hassan, L. Lilja, I.D. Booker, J.P. Bergman, E. Janzén Trans Tech Publications	7 Conference Proceedings Fast Growth Rate Epitaxy on 4° Off-Cut 4-Inch Diameter 4H-SiC Wafers J. Ul Hassan, H.T. Bae, L. Lilja, I. Farkas, I. Kim Trans Tech Publications
2 Conference Proceedings Influence of Growth Temperature on Carrier Lifetime in 4H-SiC Epilayers L. Lilja, J. ul Hassan, I.D. Booker, P. Bergman, E. Janzén Trans Tech Publications	8 Conference Proceedings Influence of n-Type Doping Levels on Carrier Lifetime in 4H-SiC Epitaxial Layers L. Lilja, I. Farkas, I. Booker, J. ul Hassan, E. Janzén, J.P. Bergman Trans Tech Publications
3 Conference Proceedings Smooth 4H-SiC Epilayers Grown with High Growth Rates with Silane/Propane Chemistry Using 4° Off-Cut Substrates L. Lilja, J. Ul Hassan, E. Janzén, P. Bergman Trans Tech Publications	9 Conference Proceedings The Effect of Growth Conditions on Carrier Lifetime in N-Type 4H-SiC Epitaxial Layers L. Lilja, J. Hassan, I.D. Booker, J.P. Bergman, E. Janzén Trans Tech Publications
4 Conference Proceedings Oxidation Induced ON₁, ON_2a/b Defects in 4H-SiC Characterized by DLTS I.D. Booker, H. Abdalla, L. Lilja, J. Ul Hassan, P. Bergman Trans Tech Publications	10 Conference Proceedings Improved Epilayer Surface Morphology on 2° Off-Cut 4H-SiC Substrates L. Lilja, J. Ul Hassan, E. Janzén, P. Bergman Trans Tech Publications
5 Conference Proceedings Comparison of Carrier Lifetime Measurements and Mapping in 4H SiC Using Time Resolved Photoluminscence and µ-PCD B. Kallinger, M. Rommel, L. Lilja, J. Ul Hassan, I.D. Booker Trans Tech Publications	11 Conference Proceedings Comparison of Post-Growth Carrier Lifetime Improvement Methods for 4H-SiC Epilayers I.D. Booker, J. Hassan, A. Hallén, E.Ö. Sveinbjörnsson, O. Kordina Trans Tech Publications
6 Conference Proceedings Fabrication and Design of 10 kV PiN Diodes Using On-Axis 4H-SiC A. Salemi, B. Buono, A. Hallén, J. Ul Hassan, P. Bergman Trans Tech Publications	12 Conference Proceedings High Growth Rate with Reduced Surface Roughness during On-Axis Homoepitaxial Growth of 4H-SiC J. Hassan, J.P. Bergman, A. Henry, E. Janzén Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12