Energy Gaps Induced by a Semiconducting Substrate in the Epitaxial Graphene Density of States

Energy Gaps Induced by a Semiconducting Substrate in the Epitaxial Graphene Density of States

Author(s):

Publication title:

Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation

Title of ser.:

Materials science forum

Ser. no.:

740-742

Pub. Year:

2013

Page(from):

141

Page(to):

144

Pages:

4

Pub. info.:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00054223
Series ID:	PA00000012
Conf. info. (Name):	European Conference on Silicon Carbide and Related Materials (ECSCRM 2012)
Conf. info. (Number):	9th
Conf. info. (Venue):	St. Petersburg, Russian Federation
Conf. info. (Date):	2012.09.02-2012.09.06
Note for article:	9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation

Similar Items:

1 Conference Proceedings Epitaxial Single-Layer Graphene on the SiC Substrate S.Yu. Davydov, A.A. Lebedev Trans Tech Publications	7 Conference Proceedings Role of Spontaneous Polarization Effect in the Formation of the Energy Diagram of the NH/3C/NH-SiC Heterostructure: An Analytical Approach S.Y. Davydov, A.A. Lebedev Trans Tech Publications
2 Conference Proceedings A Study of the Intermediate Layer in 3C-SiC/6H-SiC Heterostructures A.A. Lebedev, M.V. Zamoryanskaya, S.Yu. Davydov, D.A. Kirilenko, S.P. Lebedev Trans Tech Publications	8 Conference Proceedings Low-Temperature Transport Properties of Graphene and Multilayer Graphene on 6H-SiC A.A. Lebedev, N.V. Agrinskaya, V.A. Berezovets, V.I. Kozub, S.P. Lebedev Trans Tech Publications
3 Conference Proceedings RHEED Study of Epitaxial Graphene on Conductive and Semi-Insulating 6H-SiC (0001) Substrates I.S. Kotousova, S.P. Lebedev, A.A. Lebedev Trans Tech Publications	9 Conference Proceedings Graphene-on-Porous-Silicon Carbide Structures M.G. Mynbaeva, A.A. Sitnikova, S.P. Lebedev, V.N. Petrov, D.A. Kirilenko Trans Tech Publications
4 Conference Proceedings Simple Model for Calculation of SiC Epitaxial Layers Growth Rate in Vacuum Davydov, S.Yu., Savkina, N.S., Lebedev, A.A., Syvaejaervi, M., Yakimova, R. Trans Tech Publications	10 Conference Proceedings Heteroepitaxial Growth of 3C-SiC on Polar Faces of 6H-SiC Substrates, TEM Investigations S.P. Lebedev, A.A. Lebedev, A.A. Sitnikova, D.A. Kirilenko, N.V. Seredova Trans Tech Publications
5 Conference Proceedings Low Temperature near Band Gap Photoluminescence of 3C-SiC/15R-SiC and 3C-SiC/6H-SiC Heterostructures A.A. Lebedev, P.L. Abramov, E.V. Bogdanova, S.Y. Davydov, S.P. Lebedev Trans Tech Publications	11 Conference Proceedings Growth and Study of Thick 3C-SiC Epitaxial Layers Produced by Epitaxy on 6H-SiC Substrates A.A. Lebedev, V.V. Zelenin, P.L. Abramov, E.V. Bogdanova, S.P. Lebedev, D.K. Nel'son, B.S. Razbirin, M.P. Scheglov, A.S. … Trans Tech Publications
6 Conference Proceedings To the Experimental Determination of the Spontaneous Polarization for the Silicon Carbide Polytypes S.Yu. Davydov, A.A. Lebedev, O.V. Posrednik Trans Tech Publications	12 Conference Proceedings Calculations of the Spontaneous Polarizations and Dielectric Constants for AlN, GaN, InN, and SiC S.Y. Davydov, A.A. Lebedev Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12