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Different Dissociation Behavior of [11-20] and Non-[11-20] Basal Plane Dislocations in 4H-SiC under Electron Beam Irradiation

Author(s):
Publication title:
Defects-recognition, imaging and physics in semiconductors XIV : selected, peer reviewed papers from the 14th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors, September 25-29, 2011, Miyazaki, Japan
Title of ser.:
Materials science forum
Ser. no.:
725
Pub. Year:
2012
Page(from):
45
Page(to):
48
Pages:
4
Pub. info.:
Aedermannsdorf, Switzerland: Trans Tech Publications
ISSN:
02555476
Language:
English
Call no.:
M23650
Type:
Conference Proceedings

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