Electrical Characterisation of Defects in Polycrystalline B-Doped Diamond Films
- Author(s):
- Publication title:
- Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA
- Title of ser.:
- Materials science forum
- Ser. no.:
- 717-720
- Pub. Year:
- 2012
- Pt.:
- 2
- Page(from):
- 1315
- Page(to):
- 1318
- Pages:
- 4
- Pub. info.:
- Aedermannsdorf, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- Language:
- English
- Call no.:
- M23650
- Type:
- Conference Proceedings
Similar Items:
Materials Research Society |
7
Conference Proceedings
Silicon Defect characterization by High Resolution Laplace Deep Level Transient Spectroscopy*
Electrochemical Society |
Electrochemical Society |
8
Conference Proceedings
Silicon Defect characterization by High Resolution Laplace Deep Level Transient Spectroscopy
Electrochemical Society, SPIE-The International Society for Optical Engineering |
Trans Tech Publications |
9
Conference Proceedings
Correlation of Electrical Properties With Defects in a Homoepitaxial Chemical-Vapor-Deposited Diamond
MRS - Materials Research Society |
Trans Tech Publications |
Trans Tech Publications |
Electrochemical Society |
MRS - Materials Research Society |
6
Conference Proceedings
Application of Field-Enhanced Rapid Thermal Annealing to Activation of Doped Polycrystalline Si Thin Films
Materials Research Society |
Trans Tech Publications |