Bipolar Degradation in 4H-SiC Thyristors
- Author(s):
- Publication title:
- Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA
- Title of ser.:
- Materials science forum
- Ser. no.:
- 717-720
- Pub. Year:
- 2012
- Pt.:
- 2
- Page(from):
- 1175
- Page(to):
- 1178
- Pages:
- 4
- Pub. info.:
- Aedermannsdorf, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- Language:
- English
- Call no.:
- M23650
- Type:
- Conference Proceedings
Similar Items:
Trans Tech Publications |
7
Conference Proceedings
950 Volt 4H-SiC MOSFETs: DC and Transient Performance and Gate Oxide Reliability
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
4
Conference Proceedings
Correlation between Thermal Oxide Breakdown and Defects in n-Type 4H-SiC Epitaxial Wafers
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
11
Conference Proceedings
Comparative Evaluation of Anode Layers on the Electrical Characteristics of High Voltage 4H-SiC PiN Diodes
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |