Effect of POCl<sub>3</sub> Annealing on Reliability of Thermal Oxides Grown on 4H-SiC

Effect of POCl₃ Annealing on Reliability of Thermal Oxides Grown on 4H-SiC

Author(s):

Publication title:

Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA

Title of ser.:

Materials science forum

Ser. no.:

717-720

Pub. Year:

2012

Pt.:

2

Page(from):

739

Page(to):

742

Pages:

4

Pub. info.:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00054207
Series ID:	PA00000012
Conf. info. (Name):	International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011)
Conf. info. (Number):	14th
Conf. info. (Venue):	Cleveland, Ohio, USA
Conf. info. (Date):	2011.09.11-2011.09.16
Note for article:	14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA

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Effect of POCl3 Annealing on Reliability of Thermal Oxides Grown on 4H-SiC

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Effect of POCl₃ Annealing on Reliability of Thermal Oxides Grown on 4H-SiC