Electrical Characterization of the Graphene-SiC Heterojunction

Electrical Characterization of the Graphene-SiC Heterojunction

Author(s):

Publication title:

Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA

Title of ser.:

Materials science forum

Ser. no.:

717-720

Pub. Year:

2012

Pt.:

1

Page(from):

641

Page(to):

644

Pages:

4

Pub. info.:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00054207
Series ID:	PA00000012
Conf. info. (Name):	International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011)
Conf. info. (Number):	14th
Conf. info. (Venue):	Cleveland, Ohio, USA
Conf. info. (Date):	2011.09.11-2011.09.16
Note for article:	14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA

Similar Items:

1 Conference Proceedings High Temperature Stability of Oxygen Functionalized Epitaxial Graphene/Metal Contact Interfaces V.K. Nagareddy, S.C. Hernández, V.D. Wheeler, L.O. Nyakiti, R.L. Myers-Ward Trans Tech Publications	7 Conference Proceedings Graphene Formation on SiC Substrates B.L. VanMil, R.L. Myers-Ward, J.L. Tedesco, C.R. Eddy Jr., G.G. Jernigan Trans Tech Publications
2 Conference Proceedings Positive Temperature Coefficient SiC PiN Diodes E.A. Imhoff, K.D. Hobart, F.J. Kub, M.G. Ancona, R.L. Myers-Ward Trans Tech Publications	8 Conference Proceedings Effect of Temperature and Al Concentration on the Electrical Performance of GaN and Al_0.2Ga_0.8N Accumulation-Mode FET Devices M.J. Tadjer, K.D. Hobart, M.A. Mastro, T.J. Anderson, E.A. Imhoff Trans Tech Publications
3 Conference Proceedings Structural Characterization of 3C-SiC Films Grown on Si Layers Wafer Bonded to Polycrystalline SiC Substrates Myers, R.L., Hobart, K.D., Twigg, M., Rao, S., Fatemi, M., Kub, F.J., Saddow, S.E. Materials Research Society	9 Conference Proceedings Temperature Dependent Chemical Sensitivity of Epitaxial Graphene V.K. Nagareddy, D.K. Gaskill, J.L. Tedesco, R.L. Myers-Ward, C.R. Eddy Trans Tech Publications
4 Conference Proceedings Growth of 4H- and 3C-SiC Epitaxial Layers on 4H-SiC Step-Free Mesas R.L. Myers-Ward, L.O. Nyakiti, J.K. Hite, O.J. Glembocki, F.J. Bezares Trans Tech Publications	10 Conference Proceedings Interference-enhanced Raman Scattering in Strain Characterization of Ultra-Thin Strained SiGe and Si Films on Insulator Yin, Haizhou, Hobart, K.D., Shieh, S.R., Peterson, R.L., Duffy, T.S., Sturm, J.C. Materials Research Society
5 Conference Proceedings Development of 3C-SiC SOI Structures using Si on Polycrystalline SiC Wafer Bonded Substrates Myers, R.L., Saddow, S.E., Rao, S., Hobart, K.D., Fatemi, M., Kub, F.J. Trans Tech Publications	11 Conference Proceedings Effects of Nitrogen Doping on Basal Plane Dislocation Reduction in 8° Off-Cut 4H-SiC Epilayers V.D. Wheeler, B.L. VanMil, R.L. Myers-Ward, S. Chung, Y.N. Picard Trans Tech Publications
6 Conference Proceedings Techniques for the Dry Transfer of Epitaxial Graphene onto Arbitrary Substrates J.D. Caldwell, T.J. Anderson, K.D. Hobart, J.C. Culbertson, G.G. Jernigan Trans Tech Publications	12 Conference Proceedings Comparative Study of Ohmic Contact Metallizations to Nanocrystalline Diamond Films M.J. Tadjer, T.J. Anderson, K.D. Hobart, T.I. Feygelson, J.E. Butler Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12