Control of Epitaxial Graphene Thickness on 4H-SiC(0001) and Buffer Layer Removal through Hydrogen Intercalation

Control of Epitaxial Graphene Thickness on 4H-SiC(0001) and Buffer Layer Removal through Hydrogen Intercalation

Author(s):

Publication title:

Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA

Title of ser.:

Materials science forum

Ser. no.:

717-720

Pub. Year:

2012

Pt.:

1

Page(from):

605

Page(to):

608

Pages:

4

Pub. info.:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00054207
Series ID:	PA00000012
Conf. info. (Name):	International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011)
Conf. info. (Number):	14th
Conf. info. (Venue):	Cleveland, Ohio, USA
Conf. info. (Date):	2011.09.11-2011.09.16
Note for article:	14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA

Similar Items:

1 Conference Proceedings Surface Evolution of 4H-SiC(0001) during In Situ* Surface Preparation and its Influence on Graphene Properties* J. ul Hassan, A. Meyer, S. Cakmakyapan, O. Kazar, J. Ingo Flege Trans Tech Publications	7 Conference Proceedings Long Charge Carrier Lifetime in As-Grown 4H-SiC Epilayer R. Karhu, I. Booker, I.G. Ivanov, E. Janzén, J. Ul Hassan Trans Tech Publications
2 Conference Proceedings Studies of Li Intercalation into Epitaxial Graphene on SiC(0001) C. Virojanadara, S. Watcharinyanon, A.A. Zakharov, R. Yakimova, L.I. Johansson Trans Tech Publications	8 Conference Proceedings Decoupling the Graphene Buffer Layer from SiC(0001) via Interface Oxidation M. Ostler, R.J. Koch, F. Speck, F. Fromm, H. Vita Trans Tech Publications
3 Conference Proceedings Hydrogen Intercalation below Epitaxial Graphene on SiC(0001) C. Riedl, C. Coletti, T. Iwasaki, U. Starke Trans Tech Publications	9 Conference Proceedings Bandstructure Manipulation of Epitaxial Graphene on SiC(0001) by Molecular Doping and Hydrogen Intercalation Ulrich Starke Materials Research Society
4 Conference Proceedings Temperature Dependence and Selective Excitation of the Phosphorus Related Photoluminescence in 4H-SiC I.G. Ivanov, J. Hassan, A. Henry, E. Janzen Trans Tech Publications	10 Conference Proceedings Transport Properties of Single-Layer Epitaxial Graphene on 6H-SiC (0001) J. Jobst, D. Waldmann, K.V. Emtsev, T. Seyller, H.B. Weber Trans Tech Publications
5 Conference Proceedings CVD Growth and Characterisation of SiC Epitaxial Layers on Faces Perpendicular to the(0001)Basal Plane Hallin,C., Ellison,A., Ivanov,I.G., Henry,A., Son,N.T., Janzen,E. Trans Tech Publications	11 Conference Proceedings Evolution and Structure of Graphene Layers on SiC(0001) C. Riedl, J. Bernardt, K. Heinz, U. Starke Trans Tech Publications
6 Conference Proceedings Carrier Mobility as a Function of Temperature in as-Grown and H-Intercalated Epitaxial Graphenes on 4H-SiC M. Winters, E.B. Thorsteinsson, E.Ö. Sveinbjörnsson, H.P. Gislason, J. Hassan Trans Tech Publications	12 Conference Proceedings High-Resolution Raman and Luminescence Spectroscopy of Isotope-Pure ²⁸Si¹²C, Natural and ¹³C - Enriched 4H-SiC I.G. Ivanov, M. Yazdanfar, B. Lundqvist, J.T. Chen, J. Ul Hassan Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12