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XRD Characterization for Al- and N-Doped 3C-SiC on Si (100) Substrate after Pulsed Excimer Laser Anneal

Author(s):
Publication title:
Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA
Title of ser.:
Materials science forum
Ser. no.:
717-720
Pub. Year:
2012
Pt.:
1
Page(from):
497
Page(to):
500
Pages:
4
Pub. info.:
Aedermannsdorf, Switzerland: Trans Tech Publications
ISSN:
02555476
Language:
English
Call no.:
M23650
Type:
Conference Proceedings

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