Two-Way Tunneling Model of Oxide Trap Charging and Discharging in SiC MOSFETs
- Author(s):
- Publication title:
- Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA
- Title of ser.:
- Materials science forum
- Ser. no.:
- 717-720
- Pub. Year:
- 2012
- Pt.:
- 1
- Page(from):
- 465
- Page(to):
- 468
- Pages:
- 4
- Pub. info.:
- Aedermannsdorf, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- Language:
- English
- Call no.:
- M23650
- Type:
- Conference Proceedings
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